ZXMN3A06DN8TA Diodes Inc, ZXMN3A06DN8TA Datasheet - Page 4

MOSFET Power Dl 30V N-Chnl UMOS

ZXMN3A06DN8TA

Manufacturer Part Number
ZXMN3A06DN8TA
Description
MOSFET Power Dl 30V N-Chnl UMOS
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN3A06DN8TA

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.2 A
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3A06DN8TA
Manufacturer:
D1ODES
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A06DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
2% .
4
MIN.
30
1
TYP.
13.5
83.5
21.6
17.5
0.85
17.8
11.6
796
137
3.0
6.4
9.4
9.2
2.3
3.1
MAX.
0.035
0.050
0.95
100
0.5
UNIT CONDITIONS.
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 2 - OCTOBER 2002
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
DS
GS
GS
DS
DS
DD
G
DS
DS
J
GS
J
=3.5A
=3.5A
=250 A, V
GS
=250 A, V
=25°C, I
=25°C, I
=6.0 , V
=30V, V
=10V, I
=4.5V, I
=15V,I
=25 V, V
=15V,V
=15V,V
=0V
= 20V, V
=15V, I
S
F
D
D
GS
GS
=3.5A,
GS
=5.1A,
=9A
D
GS
D
GS
GS
DS
=9A
=3.5A
=7.4A
DS
=5V,
=10V,
=10V
=0V
=0V
= V
=0V,
=0V
GS

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