SUB60N06-18-E3 Vishay, SUB60N06-18-E3 Datasheet - Page 4

• Manufacturer Part Number: SUB60N06-18-E3
• Description: MOSFET Power 60V 60A 120W
• Manufacturer: Vishay

Specifications of SUB60N06-18-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2-4
SUP/SUB60N06-18
Vishay Siliconix
0.01
0.1
2.4
2.0
1.6
1.2
0.8
0.4
70
60
50
40
30
20
10
2
1
0
0
–50
10
0
–5
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
Maximum Avalanche and Drain Current
V
I
–25
D
20
GS
= 30 A
= 10 V
40
T
0
J
T
vs. Case Temperature
C
0.05
– Junction Temperature ( C)
– Case Temperature ( C)
25
60
10
50
80
–4
100
75
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
100
120
Single Pulse
125
140
150
160
10
–3
Square Wave Pulse Duration (sec)
175
180
10
–2
200
100
0.1
10
100
1
10
0.1
1
Limited
by r
DS(on)
Source-Drain Diode Forward Voltage
V
T
Single Pulse
DS
0.3
V
C
T
SD
= 25 C
J
10
– Drain-to-Source Voltage (V)
Safe Operating Area
= 150 C
–1
– Source-to-Drain Voltage (V)
1
0.6
S–57253—Rev. D, 24-Feb-98
T
0.9
10
J
Document Number: 70290
= 25 C
1
1.2
10 s
100 s
1 ms
10 ms
100 ms
dc
100
3
1.5