SUB60N06-18-E3 Vishay, SUB60N06-18-E3 Datasheet

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... Symbol 100 0 (TO-220AB and TO-263 (TO-263 Symbol c PCB Mount (TO-263 thJA hJA Free Air (TO-220AB) R thJC SUP/SUB60N06-18 Vishay Siliconix D S Limit Unit 120 60 180 mJ b 120 W W 3.7 –55 to 175 C stg Limit Unit 40 62.5 C/W C/W 1.25 www.vishay.com FaxBack 408-970-5600 2-1 ...

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... SUP/SUB60N06-18 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance DS(on) a Forward Transconductance b Dynamic Input Capacitance Output Capacitance C Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge ...

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... V – Drain-to-Source Voltage (V) DS Document Number: 70290 S–57253—Rev. D, 24-Feb-98 100 0.020 25 C 0.016 125 C 0.012 0.008 0.004 iss SUP/SUB60N06-18 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 I – Drain Current (A) D Gate Charge – ...

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... SUP/SUB60N06-18 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0 –50 – 100 T – Junction Temperature ( C) J Maximum Avalanche and Drain Current vs. Case Temperature 100 120 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 ...

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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...