SUB60N06-18-E3 Vishay, SUB60N06-18-E3 Datasheet - Page 3

• Manufacturer Part Number: SUB60N06-18-E3
• Description: MOSFET Power 60V 60A 120W
• Manufacturer: Vishay

Specifications of SUB60N06-18-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70290
S–57253—Rev. D, 24-Feb-98
3000
2500
2000
1500
1000
100
500
75
50
25
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
V
V
2
V
DS
DS
GS
10
T
Output Characteristics
C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
= –55 C
Transconductance
V
Capacitance
C
GS
20
4
oss
= 10, 9, 8, 7 V
20
30
6
30
40
C
6 V
5 V
4 V
8
25 C
iss
125 C
10
50
40
0.020
0.016
0.012
0.008
0.004
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
V
I
D
GS
= 60 A
On-Resistance vs. Drain Current
= 10 V
V
20
V
T
2
GS
C
GS
10
Transfer Characteristics
25 C
Q
= 125 C
= 10 V
g
SUP/SUB60N06-18
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
– Drain Current (A)
Gate Charge
40
4
Vishay Siliconix
20
60
–55 C
6
30
80
8
100
10
40
2-3