BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 18

• Manufacturer Part Number: BPX 43-4/5
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4/5

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24/0.26V
• Dark Current (max): 100nA
• Light Current: 9500/15000uA
• Rise Time: 15000/18000ns
• Fall Time: 15000/18000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3582

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
124
DIL
T 1
T 1 3/4
T 1 3/4
Sidelooker
Photodiodes
PIN Photodiodes in clear plastic package
Package
Infrared Components
Silicon Photodetectors
Type
BPW 34
BPW 34 B
SFH 229
SFH 203
SFH 213
SFH 203 P
SFH 206 K
http://catalog.osram-os.com
Half
angle
φ
±
[°]
± 60
± 60
± 17
± 20
± 10
± 75
± 60
Radiant
sensitive
area typ.
[mm
7.02
7.45
0.31
1.00
1.00
1.00
7.02
2
]
I
[μA]
80 (≥
50)
75
28 (≥
18)
80 (≥
50)
135 (≥
100)
9.5 (≥
5)
80 (≥
50)
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measurement
cond.
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
v
R
v
R
v
R
v
R
v
R
v
R
v
R
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
0.05 (≤
5)
1 (≤ 5)
1 (≤ 5)
1 (≤ 5)
2 (≤ 30) V
R
Measure-
ment cond.
V
V
V
V
R
R
R
R
R
R
R
= 10 V
= 10 V
= 10 V
= 20 V
= 20 V
= 20 V
= 10 V
λ
typ.
[nm]
400 ...
1100
350 ...
1100
380 ...
1100
400 ...
1100
400 ...
1100
400 ...
1100
400 ...
1100
10%
t
typ
[μs]
0.02
0.025
0.01
0.005
0.005
0.005
0.02
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
R
R
R
R
L
L
L
L
L
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 10 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P0073
Q65110A3126
Q62702P0215
Q62702P0955
Q62702P0930
Q62702P0942
Q62702P0129
Technical Data
Package
Fig.
37
37
13
39
20
40
38