BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 17

• Manufacturer Part Number: BPX 43-4/5
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4/5

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24/0.26V
• Dark Current (max): 100nA
• Light Current: 9500/15000uA
• Rise Time: 15000/18000ns
• Fall Time: 15000/18000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3582

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
SMT DIL
SMT DIL
SMT DIL RG
SMT DIL RG
Smart DIL
Smart DIL RG
T1 3/4 SMR
T1 3/4 SMR
Photodiodes
SMT PIN Photodiodes with daylight blocking filter
Package
Infrared Components
Silicon Photodetectors
Type
BP 104 FS
BP 104 FAS
BPW 34 FS
BPW 34 FAS
BP 104 FASR
BPW 34 FSR
BPW 34 FASR
SFH 2400 FA
SFH 2400 FAR
SFH 2500 FA
SFH 2505 FA
http://catalog.osram-os.com
Half
angle
φ
±
[°]
± 60
± 60
± 60
± 60
± 60
± 60
± 15
± 15
Radiant
sensitive
area typ.
[mm
4.84
7.02
4.84
7.02
1.00
1.00
1.00
1.00
2
]
I
[μA]
34 (≥
25)
50 (≥
40)
34 (≥
25)
50 (≥
40)
6.2 (≥
3.6)
6.2 (≥
3.6)
70 (≥
50)
70 (≥
50)
P
Measurement
cond.
λ = 950 nm,
E
cm
λ = 870 nm,
E
cm
λ = 950 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 950 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
λ = 870 nm,
E
cm
e
e
e
e
e
e
e
e
e
e
e
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
= 1 mW/
2
2
2
2
2
2
2
2
2
2
2
, V
, V
, V
, V
, V
, V
, V
, V
, V
, V
, V
R
R
R
R
R
R
R
R
R
R
R
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
1 (≤ 5)
1 (≤ 5)
1 (≤ 5)
1 (≤ 5)
R
Measure-
ment cond.
V
V
V
V
R
R
R
R
R
R
R
R
= 10 V
= 10 V
= 10 V
= 10 V
= 20 V
= 20 V
= 20 V
= 20 V
λ
typ.
[nm]
800 ...
1100
730 ...
1100
780 ...
1100
730 ...
1100
730 ...
1100
780 ...
1100
730 ...
1100
750 ...
1100
750 ...
1100
750 ...
1100
750 ...
1100
10%
t
typ
[μs]
0.02
0.02
0.02
0.02
0.005
0.005
0.005
0.005
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
Ordering Code
Q65110A2627
Q65110A2672
Q65110A2700
Q65110A3121
Q65110A4263
Q65110A2740
Q65110A2699
Q65110A2638
Q65110A9563
Q65110A1202
Q65110A1204
Technical Data
Package
Fig.
34
34
35
35
31
93
18
32
123