BPX 43-4/5 OSRAM Opto Semiconductors Inc, BPX 43-4/5 Datasheet - Page 12

Photodetector Transistors PHOTODIODE

BPX 43-4/5

Manufacturer Part Number
BPX 43-4/5
Description
Photodetector Transistors PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheets

Specifications of BPX 43-4/5

Maximum Power Dissipation
220 mW
Maximum Dark Current
20 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-18
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.24/0.26V
Dark Current (max)
100nA
Light Current
9500/15000uA
Rise Time
15000/18000ns
Fall Time
15000/18000ns
Power Dissipation
220mW
Peak Wavelength
880nm
Half-intensity Angle
30deg
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P3582
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
118
Multi TOPLED
Multi TOPLED
Phototransistors
Detector/Emitter in Multi TOPLED package
Package
Package
Infrared Components
Silicon Photodetectors
Type
SFH 331-JK
Type
SFH 7221
http://catalog.osram-os.com
http://catalog.osram-os.com
http://catalog.osram-os.com
Emitter
λ
typ
[nm]
635
Detector
Radiant sensi-
tive area typ.
[mm
0.038
Emitter
λ
typ
[nm]
880
Detector
Radiant sensi-
tive area typ.
[mm
0.038
peak
peak
2
2
]
]
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
PCE
PCE
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
I
[mcd]
6 (4 ... 12.5)
Measurement
cond.
λ = 950 nm, E
= 0.1 mW/cm
V
I
[mW/sr]
≥ 4
Measurement
cond.
λ = 880 nm, E
= 0.1 mW/cm
V
V
e
CE
CE
= 5 V
= 5 V
2
2
e
e
,
,
Measurement
cond.
I
V
max.
[V]
35
Measurement
cond.
I
= 20 ms
V
max.
[V]
35
F
F
CE
CE
= 10 mA
= 100 mA, t
p
V
[V]
2 (≤ 2.6)
λ
typ.
[nm]
440 ... 1150
V
[V]
1.5 (≤ 1.8)
λ
typ.
[nm]
440 ... 1150
F
F
10%
10%
Measurement
cond.
I
t
typ
[μs]
7
Measurement
cond.
I
= 20 ms
t
typ
[μs]
7
F
F
r
r
, t
, t
= 100 mA, t
= 10 mA
f
f
p
Ordering Code
Q65110A2821
Ordering Code
Q65110A2741
Technical Data
Package
Fig.
11
Package
Fig.
12

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