QSE113E3R0 Fairchild Semiconductor, QSE113E3R0 Datasheet - Page 3

• Manufacturer Part Number: QSE113E3R0
• Description: Photodetector Transistors 0.25mA, 5V Phototransistor
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSE113E3R0

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side Looker
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QSE113E3R0_NL

© 2002 Fairchild Semiconductor Corporation
10
10
10
10
10
-1
-2
-3
0
1
0
10
10
10
1
0
-1
0.1
V
GaAs Light Source
Figure 3. Dark Current vs. Collector - Emitter Voltage
CE
= 5V
5
Figure 1. Light Current vs. Radiant Intensity
V
CE
E
e
10
- Collector-Emitter Voltage (V)
- Radiant Intensity (mW/cm
15
10
10
10
10
10
10
4
3
2
1
0
-1
25
Normalized to:
V
T
20
A
CE
= 25°C
= 25V
2
Figure 5. Dark Current vs. Ambient Temperature
)
25
INFRARED PHOTOTRANSISTOR
T
A
50
- Ambient Temperature ( °C)
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1
30
180
170
160
1.0
150
10
10
10
10
V
1
0
-1
-2
140
0.1
CE
75
0.8
= 25V
130
Figure 4. Light Current vs. Collector - Emitter Voltage
V
0.6
CE
120
Figure 2. Angular Response Curve
= 10V
0.4
110
V
PLASTIC SILICON
CE
QSE113
0.2
100
100
- Collector-Emitter Voltage (V)
0.0
0.0
90
1
I e = 1mW/cm
I e = 0.5mW/cm
I e = 0.2mW/cm
I e = 0.1mW/cm
80
0.2
70
0.4
2
2
2
2
60
0.6
50
Normalized to:
V
I e = 0.5mW/cm
T
CE
A
QSE114
= 25°C
0.8
10
= 5V
40
30
1.0
20
10
0
2
5/1/02