QSE113E3R0 Fairchild Semiconductor, QSE113E3R0 Datasheet

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QSE113E3R0

Manufacturer Part Number
QSE113E3R0
Description
Photodetector Transistors 0.25mA, 5V Phototransistor
Manufacturer
Fairchild Semiconductor
Type
IR Chipr
Datasheet

Specifications of QSE113E3R0

Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
Side Looker
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QSE113E3R0_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSE113E3R0
Manufacturer:
EPCOS
Quantity:
207
DESCRIPTION
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
• NPN silicon phototransistor
• Package type: Sidelooker
• Medium wide reception angle, 50°
• Package material and color: black epoxy
• Matched emitter: QEE113
• Daylight filter
• High sensitivity
© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
Ø 0.095 (2.41)
0.050 (1.27)
0.030 (0.76)
PACKAGE DIMENSIONS
0.087 (2.22)
EMITTER
0.100 (2.54)
NOM
0.020 (0.51) SQ.
0.100 (2.54)
(2X)
COLLECTOR
0.175 (4.44)
Ø 0.065 (1.65)
0.500 (12.70)
INFRARED PHOTOTRANSISTOR
0.200 (5.08)
MIN
Page 1 of 4
PLASTIC SILICON
QSE113
SCHEMATIC
Collector
Emitter
QSE114
5/1/02

Related parts for QSE113E3R0

QSE113E3R0 Summary of contents

Page 1

... Package type: Sidelooker • Medium wide reception angle, 50° • Package material and color: black epoxy • Matched emitter: QEE113 • Daylight filter • High sensitivity © 2002 Fairchild Semiconductor Corporation INFRARED PHOTOTRANSISTOR 0.175 (4.44) Ø 0.065 (1.65) 0.200 (5.08) 0.500 (12.70) ...

Page 2

... Collector Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown (5) On-State Collector Current QSE113 (5) On-State Collector Current QSE114 (5) Saturation Voltage Rise Time Fall Time © 2002 Fairchild Semiconductor Corporation INFRARED PHOTOTRANSISTOR (T = 25°C unless otherwise specified =25°C unless otherwise specified) A Test Conditions Symbol λ ...

Page 3

... Figure 1. Light Current vs. Radiant Intensity GaAs Light Source 0 Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage Collector-Emitter Voltage (V) CE © 2002 Fairchild Semiconductor Corporation INFRARED PHOTOTRANSISTOR 140 150 160 170 180 0 Figure 5. Dark Current vs. Ambient Temperature 10 4 Normalized to 25V 25V ...

Page 4

... NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems ...

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