DS90UB901QSQX/NOPB National Semiconductor, DS90UB901QSQX/NOPB Datasheet - Page 8

• Manufacturer Part Number: DS90UB901QSQX/NOPB
• Description: IC SER/DESER 10-43MHZ 16B 32LLP
• Manufacturer: National Semiconductor

Specifications of DS90UB901QSQX/NOPB

• Function: Serializer
• Data Rate: 688Mbps
• Input Type: LVCMOS
• Output Type: CML
• Number Of Inputs: 1
• Number Of Outputs: 1
• Voltage - Supply: 1.71 V ~ 1.89 V, 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 32-WFQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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LVCMOS DC SPECIFICATIONS 3.3V I/O (SER INPUTS, DES OUTPUTS, GPIO, CONTROL INPUTS AND OUTPUTS)
V
V
I
V
V
I
I
LVCMOS DC SPECIFICATIONS 1.8V I/O (SER INPUTS, DES OUTPUTS, GPIO, CONTROL INPUTS AND OUTPUTS)
V
V
I
IN
OS
OZ
IN
Symbol
IH
IL
OH
OL
IH
IL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Supply Voltage – V
Supply Voltage – V
LVCMOS Input Voltage I/O
Voltage
CML Driver I/O Voltage (V
CML Receiver I/O Voltage
(V
Junction Temperature
Storage Temperature
Maximum Package Power
Dissipation Capacity Package
Package Derating:
DS90UB901Q 32L LLP
θ
θ
DS90UB902Q 40L LLP
ESD Rating (IEC 61000-4-2)
Air Discharge
(DOUT+, DOUT-, RIN+, RIN-)
Contact Discharge
(DOUT+, DOUT-, RIN+, RIN-)
ESD Rating (ISO10605)
Over recommended operating supply and temperature ranges unless otherwise specified.
DD
θ
θ
JA
JC
JA
JC
)
(based on 16 thermal vias)
(based on 9 thermal vias)
(based on 16 thermal vias)
(based on 9 thermal vias)
High Level Input Voltage
Low Level Input Voltage
Input Current
High Level Output Voltage
Low Level Output Voltage
Output Short Circuit Current
TRI-STATE® Output Current
High Level Input Voltage
Low Level Input Voltage
Input Current
Parameter
DDn
DDIO
(1.8V)
DD
)
R
−0.3V to + (VDDIO + 0.3V)
D
= 330Ω, C
R
1/θ
−0.3V to +(V
D
−0.3V to (V
V
V
V
V
V
V
I
V
PDB = 0V,
V
V
V
V
V
= 330Ω, C
OH
JA
IN
IN
IN
IN
DDIO
DDIO
OUT
OUT
IN
IN
IN
IN
°C/W above +25°
−65°C to +150°C
= 3.0V to 3.6V
= 3.0V to 3.6V
= 0V or 3.6V
= 3.0V to 3.6V
= +4 mA
= 1.71V to 1.89V
= 1.71V to 1.89V
= 0V or 1.89V
= 1.71V to 1.89V
(Note
= 0V
= 0V or V
−0.3V to +2.5V
−0.3V to +4.0V
= 3.0V to 3.6V
= 3.0V to 3.6V
S
= 150/330pF
(Note
DD
DD
34.3 °C/W
28.0 °C/W
S
2,
6.9 °C/W
4.4 °C/W
≥
≥
= 150pF
+150°C
+ 0.3V)
+ 0.3V)
±25 kV
±10 kV
Note
1)
DD
Conditions
3,
Note
8
4)
Serializer
GPIO Outputs
Deserializer
LVCMOS Outputs
LVCMOS Outputs
Recommended Operating
Conditions
ESD Rating (ISO10605)
Air Discharge
(DOUT+, DOUT-, RIN+, RIN-)
Contact Discharge
(DOUT+, DOUT-, RIN+, RIN-)
ESD Rating (HBM)
For soldering specifications:
Supply Voltage
(V
LVCMOS Supply
Voltage (V
OR
LVCMOS Supply
Voltage (V
Supply Noise
Operating Free Air
Temperature (T
PCLK Clock
Frequency
see product folder at www.national.com and
www.national.com/ms/MS/MS-SOLDERING.pdf
DDn
V
V
V
DDn
DDIO
DDIO
)
(1.8V)
(1.8V)
(3.3V)
DDIO
DDIO
)
)
A
)
0.65 V
GND
GND
GND
Min
-20
-20
-20
2.0
2.4
1.71
1.71
Min
3.0
-40
10
IN
R
Nom
Typ
+25
D
1.8
1.8
3.3
-24
-39
±1
±1
±1
= 2KΩ, C
+105
Max
1.89
1.89
3.6
25
25
50
43
V
0.35 V
V
IN
S
Max
+20
+20
+20
V
0.8
0.4
DDIO
= 150/330pF
+0.3
IN
IN
mVp-p
mVp-p
mVp-p
Units
≥
≥
MHz
≥
°C
±15 kV
±10 kV
V
V
V
±8 kV
Units
mA
µA
µA
µA
V
V
V
V
V