MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8S9170NR3
• Description: FET RF N-CH 900MHZ 28V OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9170NR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8S9170NR3
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 7. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
24
22
20
18
16
14
12
24
20
16
12
--4
--8
Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain
5
8
4
0
600
10
G
920 MHz
ACPR
f = 920 MHz
ps
Efficiency and ACPR versus Output Power
6
Figure 6. Broadband Frequency Response
940 MHz
7
TYPICAL CHARACTERISTICS
960 MHz
940 MHz
P
IRL
W- -CDMA TEST SIGNAL
out
8
, OUTPUT POWER (WATTS) AVG.
800
f, FREQUENCY (MHz)
9
960 MHz
10
940 MHz
V
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
DD
920 MHz
= 28 Vdc, I
--100
1000
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
0
Gain
--9
V
P
I
DQ
DQ
DD
in
100
Figure 8. Single- -Carrier W- -CDMA Spectrum
= 1000 mA
= 0 dBm
= 1000 mA
--ACPR in 3.84 MHz
= 28 Vdc
--7.2
Integrated BW
η
--5.4
D
200
1200
--3.6
0
--5
--10
--15
--20
--25
--30
--35
--40
70
60
50
40
30
20
10
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
--20
--25
--30
--35
--40
--45
--50
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9