MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S9170NR3
• Description: FET RF N-CH 900MHZ 28V OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9170NR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8S9170NR3
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 355 μAdc)
= 1000 mAdc, Measured in Functional Test)
= 2.9 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Characteristic
Frequency
920 MHz
940 MHz
960 MHz
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
(dB)
19.3
19.1
18.9
Symbol
G
V
Rating
V
V
ACPR
DD
I
I
I
DQ
PAR
ps
DS(on)
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
3
ps
D
= 28 Vdc, I
= 1000 mA, P
36.5
36.1
36.0
(%)
η
18.0
34.0
D
Min
DQ
Package Peak Temperature
1.5
2.3
0.1
5.5
—
—
—
—
—
out
= 1000 mA, P
= 50 W Avg., f = 920 MHz,
Output PAR
(dB)
--36.6
6.0
6.1
6.0
0.19
19.3
36.5
260
Typ
--10
2.3
3.1
6.0
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 50 W Avg.,
ACPR
--34.5
(dBc)
--36.6
--36.7
--36.1
Max
21.0
3.8
0.3
10
—
—
--7
1
1
3
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Unit
(dB)
Vdc
Vdc
Vdc
dBc
IRL
--10
--12
--16
dB
dB
dB
°C
%