MRF8S9170NR3 Freescale Semiconductor, MRF8S9170NR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S9170NR3
• Description: FET RF N-CH 900MHZ 28V OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9170NR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
21
20
19
18
17
16
15
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
19.8
19.6
19.4
19.2
18.8
18.6
18.4
18.2
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
--65
20
19
18
--5
--1
--2
--3
--4
--5
1
0
820
20
1
Broadband Performance @ P
--1 dB = 40 W
η
Figure 3. Intermodulation Distortion Products
--2 dB = 58.4 W
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
D
Compression (PARC) versus Output Power
DD
Figure 4. Output Peak- -to- -Average Ratio
840
= 28 Vdc, P
40
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
IM7--U
DD
IM7--L
V
Single--Carrier W--CDMA, 3.85 MHz Channel Bandwidth
TYPICAL CHARACTERISTICS
DD
860
versus Two- -Tone Spacing
= 28 Vdc, I
--3 dB = 79.1 W
= 28 Vdc, P
P
out
60
TWO--TONE SPACING (MHz)
out
= 160 W (PEP), I
, OUTPUT POWER (WATTS)
IM5--U
IM5--L
f, FREQUENCY (MHz)
880
DQ
G
80
out
= 1000 mA, f = 940 MHz
ps
= 50 W (Avg.), I
900
ACPR
10
IM3--U
IM3--L
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
100
DQ
= 1000 mA
920
PARC
out
DQ
IRL
= 50 Watts Avg.
120
940
= 1000 mA
PARC
G
ps
140
960
ACPR
η
D
980
160
100
44
42
40
38
36
--27
--29
--31
--33
--35
--37
80
70
60
50
40
30
20
--15
--20
--25
--30
--35
--40
--45
0
--5
--10
--15
--20
MRF8S9170NR3
--1.5
--2
--2.5
--3
--3.5
--4
5