MRF8S21120HSR3 Freescale Semiconductor, MRF8S21120HSR3 Datasheet - Page 8

• Manufacturer Part Number: MRF8S21120HSR3
• Description: FET RF N-CH 2.1GHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21120HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 2.17GHz
• Gain: 17.6dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

8
MRF8S21120HR3 MRF8S21120HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
58
57
56
55
54
53
52
51
50
49
48
47
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
29
30
(MHz)
(MHz)
2140
2170
2110
2110
2140
2170
Figure 10. Pulsed CW Output Power
f
f
31
2110 MHz
versus Input Power @ 28 V
Test Impedances per Compression Level
V
DD
32
= 28 Vdc, I
10 μsec(on), 10% Duty Cycle
P1dB
P1dB
P1dB
P
Watts
in
, INPUT POWER (dBm)
155
158
155
33
2170 MHz
P1dB
DQ
34
3.73 -- j8.14
4.93 -- j8.59
7.50 -- j9.37
= 850 mA, Pulsed CW,
2140 MHz
Z
dBm
51.9
52.0
51.9
source
35
Ω
2110 MHz
36
Watts
174
186
182
37
2170 MHz
1.29 -- j3.01
1.32 -- j3.16
1.40 -- j3.28
P3dB
38
Z
2140 MHz
load
Ω
Ideal
Actual
dBm
52.4
52.7
52.6
39
40
Freescale Semiconductor
RF Device Data