MRF8S21120HSR3 Freescale Semiconductor, MRF8S21120HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8S21120HSR3
• Description: FET RF N-CH 2.1GHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21120HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 2.17GHz
• Gain: 17.6dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8S21120HR3 MRF8S21120HSR3
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 7. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
19
18
17
16
15
14
13
18
15
12
Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain
5
9
6
3
0
1740
1
V
W--CDMA, 3.84 MHz Channel Bandwidth
DD
Efficiency and ACPR versus Output Power
6
Figure 6. Broadband Frequency Response
2110 MHz
1840
= 28 Vdc, I
7
TYPICAL CHARACTERISTICS
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
1940
P
W- -CDMA TEST SIGNAL
2140 MHz
out
DQ
8
, OUTPUT POWER (WATTS) AVG.
= 850 mA, Single--Carrier
f, FREQUENCY (MHz)
2040
9
10
2170 MHz
10
2140
2110 MHz
IRL
Gain
2140 MHz
2240
2170 MHz
--100
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
0
V
P
I
--9
DQ
2340
DD
in
= 0 dBm
Figure 8. Single- -Carrier W- -CDMA Spectrum
= 850 mA
--ACPR in 3.84 MHz
= 28 Vdc
--7.2
100
Integrated BW
ACPR
η
G
2440
D
ps
--5.4
300
2540
--3.6
0
--7
--14
--21
--28
--35
--42
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
Freescale Semiconductor
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
RF Device Data
5.4
7.2
9