MRF8S21120HSR3 Freescale Semiconductor, MRF8S21120HSR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S21120HSR3
• Description: FET RF N-CH 2.1GHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21120HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 2.17GHz
• Gain: 17.6dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8S21120HR3 MRF8S21120HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
GG
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 2 x V
(2)
GS(Q)
DS
D
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 172 μAdc)
= 850 mAdc)
= 850 mAdc, Measured in Functional Test)
= 1.72 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
Characteristic
Frequency
2110 MHz
2140 MHz
2170 MHz
(1)
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
Symbol
V
V
V
V
ACPR
I
I
I
DS(on)
PAR
(dB)
17.4
17.5
17.6
GS(th)
GG(Q)
G
GS(Q)
G
IRL
DSS
DSS
GSS
η
DD
DQ
ps
ps
D
= 28 Vdc, I
= 850 mA, P
17.0
32.5
34.6
34.1
34.0
Min
(%)
1.2
4.0
0.1
5.9
η
—
—
—
—
—
—
D
DQ
out
= 850 mA, P
= 28 W Avg., f = 2170 MHz,
Output PAR
--37.6
(dB)
0.16
17.6
34.0
Typ
--13
1.8
2.6
5.2
6.4
6.4
6.5
6.4
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 28 W Avg.,
ACPR
--36.0
(dBc)
--37.5
--38.0
--37.6
Max
20.0
2.7
7.0
0.3
10
--8
—
—
—
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
(dB)
Vdc
Vdc
Vdc
Vdc
dBc
IRL
--22
--18
--13
dB
dB
dB
%