FDMC7664 Fairchild Semiconductor, FDMC7664 Datasheet - Page 6

• Manufacturer Part Number: FDMC7664
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7664

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 18.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Forward Transconductance Gfs (max / Min): 115 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18.8 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7664 Rev.C2
Dimensional Outline and Pad Layout
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
E. LAND PATTERN RECOMMENDATION IS
A. DOES NOT CONFORM TO JEDEC
D. DRAWING FILE NAME : MLP08SREVA
BASED ON FSC DESIGN ONLY
PIN#1 QUADRANT
ASME Y14.5M, 1994
REGISTRATION MO-229
PIN #1 IDENT
0.08 C
0.10 C
(4X)
0.8 MAX
2X
SEATING
0.55
0.45
R0.150
PLANE
0.299
0.10 C
0.05
0.00
1.150
0.65
8
1
TOP VIEW
SIDE VIEW
BOTTOM VIEW
3.30
2.32
2.22
1.95
0.785
5
4
0.40
0.30
3.30
1.95
(8X)
B
2.05
0.10
0.05
A
2X
(0.203)
0.350
0.10 C
C A B
C
6
RECOMMENDED LAND PATTERN
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