FDMC7664 Fairchild Semiconductor, FDMC7664 Datasheet - Page 4

• Manufacturer Part Number: FDMC7664
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7664

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 18.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Forward Transconductance Gfs (max / Min): 115 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18.8 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7664 Rev.C2
Typical Characteristics
0.01
100
30
10
0.1
10
10
1
0.01
Figure 7.
1
8
6
4
2
0
0.01
0
I
D
Figure 9.
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
= 18.8 A
Figure 11. Forward Bias Safe
J
C
JA
= MAX RATED
= 25
= 125
0.1
V
Switching Capability
o
DS
Gate Charge Characteristics
C
0.1
t
AV
15
, DRAIN to SOURCE VOLTAGE (V)
o
Operating Area
C/W
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
T
g
J
V
, GATE CHARGE (nC)
= 125
DD
1
= 10 V
o
C
1
30
T
10
T
J
J
V
= 25
= 25 °C unless otherwise noted
DD
10
= 20 V
T
o
J
C
45
= 100
100
V
DD
100 us
1 ms
10 ms
100 ms
1 s
10 s
o
DC
= 15 V
C
100
1000
60
200
4
2000
1000
100
0.5
10
7000
1000
1
100
10
90
80
70
60
50
40
30
20
10
Figure 10.
50
0
-4
0.1
25
Figure 12.
SINGLE PULSE
R
T
Figure 8.
Limited by Package
R
C
Current vs Case Temperature
f = 1 MHz
V
JA
= 25
10
GS
JC
= 125
-3
= 0 V
= 3.0
o
C
V
50
Maximum Continuous Drain
Power Dissipation
DS
to Source Voltage
o
10
t, PULSE WIDTH (sec)
o
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C/W
T
C
Single Pulse Maximum
Capacitance vs Drain
-2
,
CASE TEMPERATURE (
10
75
1
-1
V
1
GS
100
= 4.5 V
10
V
o
GS
C )
V
GS
125
= 10 V
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10
10
= 10 V
C
C
2
C
iss
oss
rss
10
150
30
3