FDMC7664 Fairchild Semiconductor, FDMC7664 Datasheet - Page 3

• Manufacturer Part Number: FDMC7664
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7664

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 18.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Forward Transconductance Gfs (max / Min): 115 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18.8 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7664 Rev.C2
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
60
45
30
15
60
45
30
15
Figure 3. Normalized On Resistance
0
0
-75
0.0
Figure 1.
1
Figure 5. Transfer Characteristics
I
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
D
V
GS
DS
= 18.8 A
-50
= 10 V
vs Junction Temperature
= 5 V
T
V
-25
V
J
DS
,
GS
0.3
On Region Characteristics
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
0
= 150
2
V
V
V
V
V
25
GS
GS
GS
GS
GS
o
C
= 4 V
= 6 V
= 4.5 V
= 3.5 V
0.6
= 10 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
50
T
J
= 25 °C unless otherwise noted
75
3
0.9
T
o
100 125 150
T
C )
J
J
= -55
= 25
V
GS
= 3 V
o
o
C
C
1.2
4
3
0.001
0.01
100
0.1
12
10
9
6
3
0
1
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
= 150
= 0 V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
o
15
I
Source Voltage
4
C
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
V
DRAIN CURRENT (A)
0.4
GS
= 3 V
0.6
30
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
T
V
V
J
J
GS
GS
= 125
= 25
= 4.5 V
= 6 V
0.8
o
C
o
C
T
T
J
45
J
8
= -55
= 25
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V
V
I
D
1.0
GS
GS
V
= 18.8 A
o
GS
o
= 3.5 V
C
= 10 V
C
= 4 V
1.2
10
60