GP1S196HCZSF Sharp Microelectronics, GP1S196HCZSF Datasheet - Page 5

• Manufacturer Part Number: GP1S196HCZSF
• Description: SENSOR OPTO SLOT 1.1MM TRANS SMD
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S196HCZSF

• Sensing Distance: 0.043" (1.1mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 30mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2510-5

Fig.7 Collector-emitter Saturation Votage vs.
Fig.9 Response Time vs. Load Resistance
Fig.11 Relative Collector Current vs. Shield
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
1 000
Ambient Temperature
0.18
0.16
0.14
0.12
0.08
0.06
0.04
100
0.2
0.1
Distance (1)
10
1
−25
100
0.1
90
80
70
60
50
40
30
20
10
0
V
I
T
C
0
a
CE
=100μA
=25˚C
=5V
I
V
F
=5mA
CE
=5V
Ambient temperature T
0
Shield moving distance L (mm)
0.5
Load resistance R
1
t
t
f
t
r
d
25
1
L
10
50
a
(kΩ)
(˚C)
t
s
I
I
F
C
1.5
=10mA
=40μA
75
0
100
L
2
5
Fig.8 Collector Dark Current vs.
Fig.10 Test Circuit for Response Time
Fig.12 Relative Collector Current vs. Shield
Input
R
D
10
Ambient Temperature
10
10
10
10
Distance (1)
100
10
90
80
70
60
50
40
30
20
10
6
7
8
9
0
0
0
V
CE
I
V
F
=5mA
V
CE
R
CC
20V
=5V
L
Shield moving distance L (mm)
Ambient temperature T
25
0.5
GP1S196HCZ0F/GP1S196HCZSF
Output
Output
Input
50
1
t
t
d
r
a
(˚C)
Sheet No.: D3-A01001EN
75
1.5
100
t
t
2
s
f
10%
90%