GP1S196HCZSF Sharp Microelectronics, GP1S196HCZSF Datasheet - Page 4

• Manufacturer Part Number: GP1S196HCZSF
• Description: SENSOR OPTO SLOT 1.1MM TRANS SMD
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S196HCZSF

• Sensing Distance: 0.043" (1.1mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 30mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2510-5

Fig.1 Forward Current vs. Ambient
Fig.3 Forward Current vs. Forward
Fig.5 Collector Current vs. Collector-
Temperature
Voltage
emitter Voltage
100
60
50
40
30
20
10
1.6
1.2
0.8
0.4
10
0
1
2
0
25
0
0
T
a
25˚C
0
Collector-emitter voltage V
2
Ambient temperature T
0.5
Forward voltage V
25
T
45˚C
a
65˚C
4
=85˚C
1
50
6
F
a
(V)
(˚C)
I
20mA
10mA
5mA
25˚C
F
CE
1.5
−25˚C
0˚C
75 85
30mA
(V)
8
100
10
2
4
Fig.2 Power Dissipation vs.
Fig.4 Collector Current vs. Forward
Fig.6 Relative Collector Current vs.
Ambient Temperature
Current
Ambient Temperature
130
120
110
100
90
80
70
60
50
40
30
20
10
120
100
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
80
75
60
40
20
15
−25
1
0
0
−25
0
V
T
P,P
P
2
a
CE
=25˚C
tot
c
=5V
0
4
0
Ambient temperature T
Ambient temperature T
GP1S196HCZ0F/GP1S196HCZSF
Forward current I
6
25
8
25
10
I
V
I
F
C
=5mA
50
12
CE
=100% at T
F
=5V
50
(mA)
a
a
14
(C)
(˚C)
Sheet No.: D3-A01001EN
75 85
16
a
=25˚C
75
18 20
100