FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 21

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

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SO-8 (Continued)
FDS6990S
FDS7764A
RF1K49156
FDS7788
FDS7766
FDS7760A
FDS6688
FDS6676
FDS6682
FDS6672A
FDS6670A
FDS6644
FDS6680A
FDS6692
FDS6680
FDS6694
FDS6294
HUF76132SK8
FDS6690A
FDS4410
FDS6690
FDS6614A
FDS6678A
FDS4488
FDS6612A
FDS9412
NDS9410A
HUF76113SK8
RF1K49157
FDS6630A
HUF76105SK8
FDS7766S
FDS6688S
FDS6676S
FDS7764S
FDS6670S
FDS6680S
FDS6690S
FDS4672A
FDS4770
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
DSS
Dual SyncFET
Config.
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0055
0.0075
0.0085
0.0095
0.0113
0.0125
0.0135
0.0135
0.0055
0.0075
0.0075
0.0075
0.022
0.004
0.005
0.006
0.007
0.008
0.008
0.011
0.018
0.022
0.022
0.022
0.028
0.038
0.006
0.009
0.011
0.016
10V
0.01
0.01
0.02
0.03
0.05
–
–
R
DS(ON)
2-16
0.0075
0.0095
0.0105
0.0145
0.0135
0.0144
0.0065
0.0075
0.0125
0.005
0.006
0.008
0.007
0.008
0.009
0.013
0.015
0.017
0.025
0.024
0.036
0.042
0.041
0.053
0.078
0.009
0.009
0.017
0.025
0.013
4.5V
0.03
0.01
0.02
0.02
0.03
0.03
–
Max (Ω) @ V
2.5V
GS
Replaced by FDS6612A
Replaced by FDS6612A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Replaced by FDS6680
=
Discrete Power Products –
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
9.5
5.4
5.3
11
29
37
43
37
40
45
22
33
21
25
16
18
19
13
10
12
13
13
12
13
14
10
41
56
43
25
24
17
17
35
47
9
5
= 5V
I
D
14.5
12.5
12.5
11.5
14.5
13.5
13.5
11.5
13.2
7.5
9.3
7.5
7.9
8.4
7.9
7.3
6.5
6.5
5.5
15
18
17
15
16
14
13
13
12
12
13
11
10
10
17
16
10
11
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
3
(W)