FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 11

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

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SuperSOT™-3/SOT-23
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDV303N
FDV301N
FDN337N
NDS355N
NDS351N
FDN359AN
FDN357N
NDS355AN
FDN361AN
NDS351AN
FDN372S
BSS138
FDN5630
NDS7002A
2N7002MTF
MMBF170
2N7002
FDN363N
BSS123
FDN5618P
NDS0605
NDS0610
BSS84
FDN360P
FDN358P
NDS356AP
NDS352AP
FDV304P
FDV302P
FDN304P
SuperSOT-3/SOT-23 N-Channel
SuperSOT-3/SOT-23 P-Channel
Products
Min. (V)
BV
100
100
-60
-60
-60
-50
-30
-30
-30
-30
-25
-25
-20
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
30
30
30
50
60
60
60
60
60
DSS
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.046
0.085
0.125
10V
0.06
0.16
0.04
0.24
0.17
0.08
0.1
3.5
0.1
7.5
0.2
0.3
10
10
–
–
–
–
–
–
–
–
–
–
2
5
5
6
5
–
–
–
R
DS(ON)
0.12@6V
0.35@6V
4.5V
0.035
0.065
0.125
0.125
0.052
0.05
0.07
0.07
0.11
0.16
0.22
0.45
0.06
0.09
0.15
0.25
0.05
0.23
7.5
0.2
0.3
0.5
1.1
10
20
10
–
–
–
–
4
6
3
Max (Ω) @ V
2-6
0.14@2.7V
0.21@2.7V
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.082
0.05
0.06
0.08
0.07
0.1
0.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by NDS355AN
Replaced by NDS351AN
1.8V
0.12
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
1.64
0.49
0.22
7.6
4.5
3.5
6.4
3.5
1.1
4.2
3.5
2.1
1.3
5.8
1.7
1.7
1.7
1.7
1.7
8.6
1.8
1.8
0.9
6.2
3.4
1.1
12
–
7
7
5
7
4
4
2
= 5V
I
0.115
D
0.68
0.22
0.22
0.28
0.12
0.17
0.18
0.12
0.13
0.46
0.12
2.5
1.7
1.7
1.3
0.9
2.2
2.7
1.9
1.7
1.8
1.4
2.6
1.7
0.5
1.2
1.5
1.1
0.9
2.4
3
2
1
2
(A)
MOSFETs
P
D
0.35
0.35
0.35
0.36
0.36
0.36
0.36
0.36
0.35
0.35
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.2
0.3
0.2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)