FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 201

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

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Discrete
MOSFET: QFET
F Q P 18 N 50 __ V2
(Continued)
®
C: Advanced QFET C-series
Empty: Previous Version of QFET
V2: Advanced QFET V2-series
Empty: Standard Product
L: Logic Level Product
F: Fast Recovery MOSFET
N: N-Channel
P: P-Channel
A: TO-3P
B: D
D: D-PAK
E: TO-126
H: TO-247
N: TO-92
P: TO-220
S: 8-SOP
Q: QFET Technology
C: SuperFET Technology
Series
Optional
Voltage Rating (x 10)
Channel Polarity
Current Rating
Package
Base Technology
Fairchild
2
-PAK
AF: TO-3PF
I: I
U: I-PAK
G: 8DIP
L: TO-264
NL: TO-92L
PF: TO-220F
T: SOT-223
2
8-8
-PAK
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