CLP200M STMicroelectronics, CLP200M Datasheet - Page 13

• Manufacturer Part Number: CLP200M
• Description: IC OVP/OCP TELECOM POWERSO-10
• Manufacturer: STMicroelectronics

Specifications of CLP200M

• Voltage - Working: 200V
• Technology: Mixed Technology
• Number Of Circuits: 2
• Applications: Telecommunications
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Clamping: -

ABSOLUTE MAXIMUM RATINGS (R
ELECTRICAL CHARACTERISTICS (R
Symbol
Symbol
V
I
I
SWOFF
I
SWON
T
I
SWON
V
I
TSM
T
LGL
T
PP
C
stg
ref
L
j
Line to GND peak surge
current
Mains power induction
current
Mains power contact current
Storage temperature range
Maximum junction temperature
current
Overvoltage internal refer-
ence
Line to GND voltage at SW1
or SW2 switching-on
Line to GND current at SW1
or SW2 switching-off
Line current at SW1 or SW2
switching-on
Line to GND capacitance
Maximum lead temperature for soldering during 10 s
Line to GND leakage
Parameter
Parameter
SENSE
SENSE
= 4 , and T
= 4 , and T
10/1000 s (open circuit voltage
wave shape 10/1000 s)
5/310 s (open circuit voltage
wave shape 10/700 s)
V
t = 200ms
V
(failure status threshold)
t = 200 ms
V
t = 15 mn
. V
. Measured between TIP
(or RING) and GND
. I
. Measured between TIP
(or RING) and GND
. Measured at 50 Hz between
TIPL (or RINGL) and GND
. Refer to test circuit page 14
. Positive pulse
. Negative pulse
. V
. F = 1 MHz
RMS
RMS
RMS
LG
LG
LG
= 1 mA
= -1 V + 1V
= 200 V
= 220V, R = 600
= 300V, R = 600
= 220V, R = 10
Test Conditions
Test Conditions
amb
amb
= 25 °C)
= 25°C)
RMS
- 40 to + 150
Min.
215
150
180
220
Value
Value
0.30
100
150
150
0.5
22
260
Max.
290
280
320
200
10
CLP200M
Unit
Unit
mA
mA
°C
°C
pF
A
A
A
A
A
13/21
V
V
A