SAF-TC1167-128F133HL AD Infineon Technologies, SAF-TC1167-128F133HL AD Datasheet - Page 95

• Manufacturer Part Number: SAF-TC1167-128F133HL AD
• Description: IC MCU 32BIT FLASH 176-LQFP
• Manufacturer: Infineon Technologies
• Series: TC116xr

Specifications of SAF-TC1167-128F133HL AD

• Core Processor: TriCore
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: ASC, CAN, EBI/EMI, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number Of I /o: 88
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFQFP
• Data Bus Width: 32 bit
• Data Ram Size: 104 KB
• Interface Type: ASC, MLI, MSC, SSC
• Maximum Clock Frequency: 133 MHz
• Number Of Programmable I/os: 88
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (12 bit, 16 Channel) / 10 bit, 4 Channel
• Packages: PG-LQFP-176
• Max Clock Frequency: 133.0 MHz
• Sram (incl. Cache): 128.0 KByte
• Can Nodes: 2
• A / D Input Lines (incl. Fadc): 36
• Program Memory: 1.0 MB
• For Use With: B158-H8690-X-0-7600IN - KIT STARTER TC116X SERIES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000602800

Table 11
Parameter
Switched
capacitance at
the analog
voltage inputs
ON resistance of
the transmission
gates in the
analog voltage
path
ON resistance
for the ADC test
(pull-down for
AIN7)
Current through
resistance for the
ADC test (pull-
down for AIN7)
1) Voltage overshoot up to 4 V is permissible at Power-Up and PORST low, provided the pulse duration is less
2) Voltage overshoot up to 1.7 V is permissible at Power-Up and PORST low, provided the pulse duration is less
3) A running conversion may become inexact in case of violating the normal operating conditions (voltage
4) If
5) If a reduced reference voltage in a range of
6) TUE is tested at
7) ADC module capability.
8) Not subject to production test, verified by design / characterization.
9) The sum of DNL/INL/Gain/Offset errors does not exceed the related TUE total unadjusted error.
10) For 10-bit conversions the DNL/INL/Gain/Offset error values must be multiplied with factor 0.25.
11) The leakage current definition is a continuous function, as shown in
Data Sheet
than 100 μs and the cumulated summary of the pulses does not exceed 1 h.
than 100 μs and the cumulated summary of the pulses does not exceed 1 h.
overshoot).
V
If the reference voltage is reduced with the factor k (k<1), then TUE, DNL, INL Gain and Offset errors increase
with the factor 1/k.
If a reduced reference voltage in a range of 1 V to
ADC speed and accuracy.
For 8-bit conversions the DNL/INL/Gain/Offset error values must be multiplied with 0.0625.
determine the characteristic points of the given continuous linear approximation - they do not define step
function.
AREF
the
= (
V
DDM
reference
+ 0.05 V to
ADC Characteristics (cont’d) (Operating Conditions apply)
V
AREF
Symbol
C
R
R
I
AIN7T
AIN
AIN7T
AINSW
= 5.0 V,
voltage
V
DDM
CC
CC –
CC 180
CC –
V
+ 0.07 V), then the accuracy of the ADC decreases by 4 LSB12.
AGND
Min.
–
V
= 0 V and
AREF
V
DDM
increases
V
/2 to
Values
DDM
90
V
Typ.
7
700
550
15
rms
DDM
= 5.0 V
V
DDM
/2 is used, then there are additional decrease in the
is used, then the ADC converter errors increase.
or
Max.
20
1500
900
30
peak
19)
the
Figure
Unit
pF
Ω
Ω
mA
V
19. The numerical values defined
DDM
Electrical Parameters
Note /
Test Condition
8)18)
8)
Test feature
available only for
AIN7
Test feature
available only for
AIN7
decreases,
8)
8) 20)
V1.3, 2009-10
TC1167
so
that