ATTINY13V-10MMUR Atmel, ATTINY13V-10MMUR Datasheet - Page 17

MCU AVR 1KB FLASH 10MHZ 10QFN

ATTINY13V-10MMUR

Manufacturer Part Number
ATTINY13V-10MMUR
Description
MCU AVR 1KB FLASH 10MHZ 10QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY13V-10MMUR

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Lead Free Status / Rohs Status
 Details
8. Errata
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
2535JS–AVR–08/10
ATtiny13 Rev. D
ATtiny13 Rev. C
ATtiny13 Rev. B
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
The revision letter in this section refers to the revision of the ATtiny13 device.
1. EEPROM can not be written below 1.9 Volt
Revision C has not been sampled.
EEPROM can not be written below 1.9 Volt
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
CC
below 1.9 volts might fail.
CC
is below 1.9 volts.
17

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