C8051F330-GM Silicon Laboratories Inc, C8051F330-GM Datasheet - Page 100
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C8051F330-GM
Manufacturer Part Number
C8051F330-GM
Description
IC 8051 MCU 8K FLASH 20MLP
Manufacturer
Silicon Laboratories Inc
Series
C8051F33xr
Specifications of C8051F330-GM
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
20-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
17
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F330DK
Minimum Operating Temperature
- 40 C
On-chip Adc
16-ch x 10-bit
On-chip Dac
1-ch x 10-bit
No. Of I/o's
17
Ram Memory Size
768Byte
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1541 - KIT TOOL EVAL SYS IN A USB STICK770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1451 - ADAPTER PROGRAM TOOLSTICK F330336-1346 - DAUGHTER CARD TOOLSTICK F330336-1264 - DEV KIT FOR C8051F330/F331
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1262
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
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Manufacturer:
SiliconL
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6 420
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11. Flash Memory
On-chip, re-programmable Flash memory is included for program code and non-volatile data storage. The
Flash memory can be programmed in-system, a single byte at a time, through the C2 interface or by soft-
ware using the MOVX instruction. Once cleared to logic 0, a Flash bit must be erased to set it back to
logic 1. Flash bytes would typically be erased (set to 0xFF) before being reprogrammed. The write and
erase operations are automatically timed by hardware for proper execution; data polling to determine the
end of the write/erase operation is not required. Code execution is stalled during a Flash write/erase oper-
ation. Refer to Table 11.1 for complete Flash memory electrical characteristics.
11.1. Programming The Flash Memory
The simplest means of programming the Flash memory is through the C2 interface using programming
tools provided by Silicon Labs or a third party vendor. This is the only means for programming a non-initial-
ized device. For details on the C2 commands to program Flash memory, see
on page 209
To ensure the integrity of Flash contents, it is strongly recommended that the on-chip V
be enabled in any system that includes code that writes and/or erases Flash memory from soft-
ware. See
11.1.1. Flash Lock and Key Functions
Flash writes and erases by user software are protected with a lock and key function. The Flash Lock and
Key Register (FLKEY) must be written with the correct key codes, in sequence, before Flash operations
may be performed. The key codes are: 0xA5, 0xF1. The timing does not matter, but the codes must be
written in order. If the key codes are written out of order, or the wrong codes are written, Flash writes and
erases will be disabled until the next system reset. Flash writes and erases will also be disabled if a Flash
write or erase is attempted before the key codes have been written properly. The Flash lock resets after
each write or erase; the key codes must be written again before a following Flash operation can be per-
formed. The FLKEY register is detailed in SFR Definition 11.2.
11.1.2. Flash Erase Procedure
The Flash memory can be programmed by software using the MOVX write instruction with the address and
data byte to be programmed provided as normal operands. Before writing to Flash memory using MOVX,
Flash write operations must be enabled by: (1) setting the PSWE Program Store Write Enable bit
(PSCTL.0) to logic 1 (this directs the MOVX writes to target Flash memory); and (2) Writing the Flash key
codes in sequence to the Flash Lock register (FLKEY). The PSWE bit remains set until cleared by soft-
ware.
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
Step 1. Disable interrupts (recommended).
Step 2. Set thePSEE bit (register PSCTL).
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Write the first key code to FLKEY: 0xA5.
Step 5. Write the second key code to FLKEY: 0xF1.
Step 6. Using the MOVX instruction, write a data byte to any location within the 512-byte page to
Step 7. Clear the PSWE and PSEE bits.
Section 11.4
.
be erased.
for more details.
Rev. 1.7
C8051F330/1/2/3/4/5
Section “20. C2 Interface”
DD
Monitor
103