PIC18F448-I/PT Microchip Technology, PIC18F448-I/PT Datasheet - Page 72

IC PIC MCU FLASH 8KX16 44TQFP

PIC18F448-I/PT

Manufacturer Part Number
PIC18F448-I/PT
Description
IC PIC MCU FLASH 8KX16 44TQFP
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F448-I/PT

Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Controller Family/series
PIC18
No. Of I/o's
33
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
SPI, I2C, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
33
Number Of Timers
4 bit
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DV164136, DM163011
Minimum Operating Temperature
- 40 C
On-chip Adc
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT44PT3 - SOCKET TRAN ICE 44MQFP/TQFPAC164305 - MODULE SKT FOR PM3 44TQFP444-1001 - DEMO BOARD FOR PICMICRO MCUAC164020 - MODULE SKT PROMATEII 44TQFP
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F448-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
PIC18F448-I/PT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
6.4
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP control, can larger blocks of program memory be
bulk erased. Word erase in the Flash array is not
supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 6-2:
DS41159E-page 70
PIC18FXX8
Required
Sequence
ERASE_ROW
Erasing Flash Program Memory
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
NOP
BSF
ERASING A FLASH PROGRAM MEMORY ROW
upper (CODE_ADDR)
TBLPTRU
high (CODE_ADDR)
TBLPTRH
low (CODE_ADDR)
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
; load TBLPTR with the base
; address of the memory block
; point to FLASH program memory
; access FLASH program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55H
; write 0AAH
; start erase (CPU stall)
; NOP needed for proper code execution
; re-enable interrupts
6.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
Load Table Pointer with address of row being
erased.
Set the EECON1 register for the erase operation:
• set the EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set the WREN bit to enable writes;
• set the FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the row erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Re-enable interrupts.
FLASH PROGRAM MEMORY
ERASE SEQUENCE
© 2006 Microchip Technology Inc.

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