PIC18F4525-I/ML Microchip Technology, PIC18F4525-I/ML Datasheet - Page 339

IC MCU FLASH 24KX16 44QFN

PIC18F4525-I/ML

Manufacturer Part Number
PIC18F4525-I/ML
Description
IC MCU FLASH 24KX16 44QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F4525-I/ML

Core Size
8-Bit
Program Memory Size
48KB (24K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFN
Controller Family/series
PIC18
No. Of I/o's
36
Eeprom Memory Size
1024Byte
Ram Memory Size
3968Byte
Cpu Speed
40MHz
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3986 B
Interface Type
SPI, I2C, EUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Number Of Timers
1 x 8
Operating Supply Voltage
4.2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, 53275-917, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
13 bit
Package
44QFN EP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFNI3DB18F4620 - BOARD DAUGHTER ICEPIC3444-1001 - DEMO BOARD FOR PICMICRO MCU
Lead Free Status / Rohs Status
 Details
TABLE 26-1:
© 2008 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
T
I
DDP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
Refer to Section 6.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
(1)
PIC18F2525/2620/4525/4620
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
4.5
40
40
MIN
MIN
MIN
1
100K
Typ†
10M
100
1M
10
10
4
4
2
Max
5.5
5.5
5.5
5.5
5.5
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
ms
ms
V
V
V
V
V
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, +25°C
Using ICSP™ port, +25°C
V
voltage
V
V
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V, +25°C
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39626E-page 337

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