ZXMD63C03X Diodes Inc, ZXMD63C03X Datasheet

MOSFET, DUAL, NP, MSOP8

ZXMD63C03X

Manufacturer Part Number
ZXMD63C03X
Description
MOSFET, DUAL, NP, MSOP8
Manufacturer
Diodes Inc
Datasheet
1.ZXMD63C03X.pdf (12 pages)

Specifications of ZXMD63C03X

Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
2.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage
RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
ZXMD63C03XTA
Manufacturer:
EPCOS
Quantity:
10 000
Company:
H&T Electronics H&T Electronics
Part Number:
ZXMD63C03XTA
Quantity:
21 340
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V
P-CHANNEL: V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
ORDERING INFORMATION
DEVICE MARKING
ZXM63C03
ISSUE 2 - SEPTEMBER 2007
DEVICE
ZXMD63C03XTA
ZXMD63C03XTC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
(BR)DSS
REEL SIZE
=-30V; R
=
(inches)
30V; R
13
7
DS(ON)
DS(ON)
=0.185
=
0.135 ; I
12 embossed
12 embossed
TAPE WIDTH
(mm)
;
I
D
D
=-2.0A
=
2.3A
1
QUANTITY
PER REEL
1,000
4,000
N-channel
ZXMD63C03X
P-channel
Top view
Pin-out
MSOP8

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ZXMD63C03X Summary of contents

Page 1

... Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXMD63C03XTA 7 ZXMD63C03XTC 13 DEVICE MARKING ZXM63C03 ISSUE 2 - SEPTEMBER 2007 = = 0.135 ; I 2. =0.185 I =-2.0A D N-channel TAPE WIDTH QUANTITY (mm) PER REEL 12 embossed 1,000 12 embossed 4,000 1 ZXMD63C03X MSOP8 P-channel Pin-out Top view ...

Page 2

... For a device surface mounted on FR4 PCB measured secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X SYMBOL N-CHANNEL P-CHANNEL V ...

Page 3

... ISSUE 2 - SEPTEMBER 2007 N-CHANNEL CHARACTERISTICS 3 ZXMD63C03X ...

Page 4

... ISSUE 2 - SEPTEMBER 2007 P-CHANNEL CHARACTERISTICS 4 ZXMD63C03X ...

Page 5

... GSS V 1.0 GS(th) 0.135 DS(on) 0.200 g 1 290 iss C 70 oss C 20 rss t 2.5 d(on 9.6 d(off 9.5 rr 2%. 5 ZXMD63C03X V I =250μ μA V =30V 20V =250μ Ω V =10V, I =1. Ω V =4.5V, I =0.85A =10V,I =0.85A = =0V f=1MHz ...

Page 6

... N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X 6 ...

Page 7

... ISSUE 2 - SEPTEMBER 2007 N-CHANNEL CHARACTERISTICS 7 ZXMD63C03X ...

Page 8

... 270 pF iss oss rss t 2.6 ns d(on 13.1 ns d(off - ZXMD63C03X CONDITIONS I =-250μ =-30V 20V =-250μ =-10V, I =-1. =-4.5V, I =-0. =-10V,I =-0. =- =0V f=1MHz V =-15V, I =-1. =6.2Ω, R =6.2Ω (Refer to test circuit) V =-24V,V =-10V =-1 ...

Page 9

... ISSUE 2 - SEPTEMBER 2007 P-CHANNEL CHARACTERISTICS 9 ZXMD63C03X ...

Page 10

... P-CHANNEL TYPICAL CHARACTERISTICS A ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X 10 ...

Page 11

... It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X 11 ...

Page 12

... Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 12 ZXMD63C03X 4.8 0.189 mm inches 0.65 0.023 Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL ...

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