ZXMD63C03X Diodes Inc, ZXMD63C03X Datasheet - Page 8

• Manufacturer Part Number: ZXMD63C03X
• Description: MOSFET, DUAL, NP, MSOP8
• Manufacturer: Diodes Inc

Specifications of ZXMD63C03X

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage: RoHS Compliant

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300μs. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - SEPTEMBER 2007
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
amb
= 25°C unless otherwise stated).
2% .
MIN.
0.92
-1.0
-30
8
TYP.
13.1
21.4
15.7
270
2.6
4.8
9.3
80
30
MAX.
0.185
-0.95
0.27
1.2
-1
100
7
2
UNIT
V
μA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ZXMD63C03X
CONDITIONS
I
V
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/μs
D
D
D
GS
GS
DD
G
DS
j
j
DS
GS
DS
DS
GS
=-1.2A
=25°C, I
=25°C, I
=-250μA, V
=-250μA, V
=6.2Ω, R
=-24V,V
=-10V, I
=-4.5V, I
=-30V, V
=-10V,I
=-25 V, V
= 20V, V
=0V
=-15V, I
S
F
D
D
GS
D
D
D
=-1.2A,
=-1.2A,
=6.2Ω
=-1.2A
=-0.6A
=-0.6A
=-1.2A
GS
=-10V,
GS
DS
GS
DS
=0V
=V
=0V
=0V,
=0V
GS