ZXMD63C03X Diodes Inc, ZXMD63C03X Datasheet - Page 2

• Manufacturer Part Number: ZXMD63C03X
• Description: MOSFET, DUAL, NP, MSOP8
• Manufacturer: Diodes Inc

Specifications of ZXMD63C03X

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage: RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - SEPTEMBER 2007
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
(V
(V
GS
GS
A
A
A
=4.5V; T
=4.5V; T
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
A
A
=25°C)(b)(d)
=70°C)(b)(d)
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
D
D
D
j
DSS
GS
SYMBOL
R
R
R
:T
2
θJA
θJA
θJA
stg
N-CHANNEL
2.3
1.8
1.5
30
14
14
-55 to +150
VALUE
0.87
1.04
1.25
6.9
8.3
10
143
100
120
20
P-CHANNEL
ZXMD63C03X
-2.0
-1.6
-9.6
-1.4
-9.6
-30
UNIT
UNIT
°C/W
°C/W
°C/W
mW/°C
mW/°C
mW/°C
°C
W
W
W
V
V
A
A
A
A
A