ISL6608 Intersil Corporation, ISL6608 Datasheet - Page 9

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ISL6608

Manufacturer Part Number
ISL6608
Description
Synchronous Rectified MOSFET Driver
Manufacturer
Intersil Corporation
Datasheet

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MOSFET selection and any external capacitance added to
the gate pins. The I
of the driver and is typically negligible.
1000
900
800
700
600
500
400
300
200
100
FIGURE 9. POWER DISSIPATION vs FREQUENCY
0
0
Q
Q
200
U
L
=200nC
=100nC
400
DDQ
600
FREQUENCY (kHz)
V
Q
Q
CC
L
U
800 1000 1200 1400 1600 1800 2000
=100nC
=50nC
product is the quiescent power
9
Q
Q
U
L
Q
Q
=50nC
=50nC
U
L
=50nC
=20nC
ISL6608
Layout Consideration
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place every power component as close to each other as
possible to reduce PCB copper losses and PCB parasitics:
shortest distance between DRAINs of upper FETs and
SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringings are on the
switching edges of the PHASE node. However, some space
in between of power components are required for the airflow
passing through. The trace routings from the drivers to the
FETs should be kept short and wide to reduce the
inductance of the traces so that the drive signals can be kept
clean, no bouncing.

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