IRL3302S International Rectifier, IRL3302S Datasheet

MOSFET N-CH 20V 39A D2PAK

IRL3302S

Manufacturer Part Number
IRL3302S
Description
MOSFET N-CH 20V 39A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3302S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 23A, 7V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 4.5V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
57W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL3302S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3302S
Manufacturer:
IR
Quantity:
68 002
Part Number:
IRL3302S
Manufacturer:
IR
Quantity:
12 500
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters.
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
2
AS
AR
J
STG
D
GS
qJC
qJA
Pak is suitable for high current applications because
@ T
@ T
@T
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
2
C
C
C
Pak is a surface mount power package capable
= 25°C
= 100°C
= 25°C
Advanced processing techniques
Power Dissipation
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
PRELIMINARY
GS
GS
@ 4.5V
@ 4.5V
G
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
-55 to + 150
S
D
Max.
0.45
160
± 10
130
5.7
5.0
D P ak
39
25
57
23
2
IRL3302S
®
R
Power MOSFET
DS(on)
Max.
V
2.2
40
DSS
I
D
PD - 9.1692A
= 39A
= 0.020W
= 20V
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
°C
W
A
V
A
9/17/97

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IRL3302S Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case qJC R Junction-to-Ambient ( PCB Mounted,steady-state)** qJA PRELIMINARY HEXFET 4. 4. 150 300 (1.6mm from case ) Typ. ––– ––– 9.1692A IRL3302S ® Power MOSFET V = 20V DSS R = 0.020W DS(on 39A Max. Units 160 57 W 0.45 W/°C ± ...

Page 2

... IRL3302S Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient /DT DV (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... V , Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics 20µs PULSE WIDTH ° 100 ° 150 15V IRL3302S 1000 VGS VGS TOP 15V TOP 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V 3.0V BOTTOM 2.5V BOTTOM 2.5V 100 2.5V 20µs PULSE WIDTH ...

Page 4

... IRL3302S 2400 iss rss gd 2000 oss ds 1600 C iss 1200 C 800 oss 400 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 ° 0.5 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage f = 1MHz C SHORTED 100 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 300 250 200 150 100 50 0 125 150 25 ° Starting T , Junction Temperature( C) Fig 10. Maximum Avalanche Energy 0.001 0. Rectangular Pulse Duration (sec) 1 IRL3302S TOP BOTTOM 50 75 100 125 J Vs. Drain Current Notes: 1. Duty factor ...

Page 6

... IRL3302S 0.022 VGS = 4.5V 0.021 0.020 0.019 0.018 0.017 0.016 Drain Current (A) D Fig 12. On-Resistance Vs. Drain Current VGS = 7. 0.020 0.019 0.018 ID = 39A 0.017 0.016 0.015 0.014 Gate-to-Source Voltage (V) GS Fig 13. On-Resistance Vs. Gate Voltage ...

Page 7

... IRL3302S 10.16 (.400 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1 .39 (.055) 1 .14 (.045 11.43 (.4 50) 8.89 (.350 3.81 (.150) 2.08 (.082) ...

Page 8

... IRL3302S Tape & Reel Information 2 D Pak TIO (. (. 330.00 (14.173 - WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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