IRL3302S International Rectifier, IRL3302S Datasheet - Page 5

• Manufacturer Part Number: IRL3302S
• Description: MOSFET N-CH 20V 39A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3302S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3302S

0.01
40
30
20
10
0.1
10
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
300
250
200
150
100
50
0
25
Fig 10. Maximum Avalanche Energy
0.01
Starting T , Junction Temperature( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
50
Vs. Drain Current
J
J
75
DM
x Z
IRL3302S
1
0.1
thJC
P
2
100
DM
+ T
TOP
BOTTOM
C
t
1
t
2
125
°
I D
10A
15A
23A
150
1