IRFR3504Z International Rectifier, IRFR3504Z Datasheet

MOSFET N-CH 40V 42A DPAK

IRFR3504Z

Manufacturer Part Number
IRFR3504Z
Description
MOSFET N-CH 40V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR3504Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR3504Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3504Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR3504Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFR3504ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR3504ZTRPBF
Manufacturer:
International Rectifier
Quantity:
64 748
Features
l
l
l
l
l
Description
HEXFET
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
D
GS
AS (Thermally limited)
AS
AR
J
STG
θJC
θJA
θJA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Ã
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
®
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
10 lbf
IRFR3504Z
D
S
-55 to + 175
D-Pak
y
Max.
in (1.1N
0.60
± 20
310
110
77
54
42
90
77
®
R
Power MOSFET
DS(on)
IRFR3504Z
IRFU3504Z
V
y
m)
Max.
DSS
I
1.66
110
D
40
IRFU3504Z
= 42A
PD - 94753A
= 9.0mΩ
= 40V
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR3504Z Summary of contents

Page 1

... Limited Parameter 94753A IRFR3504Z IRFU3504Z ® HEXFET Power MOSFET 40V DSS R = 9.0mΩ DS(on 42A D S D-Pak I-Pak IRFR3504Z IRFU3504Z Max. Units 310 90 W 0.60 W/°C ± 110 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 30µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = Ciss 1500 1000 Coss 500 ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 80 TOP Single Pulse BOTTOM 1% Duty Cycle 42A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR www.irf.com INTE RNATIONAL RECT IFIER IRFU120 LOGO ...

Page 10

E XAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLE 19, 1999 MBLY LINE "A" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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