IRFR3504Z International Rectifier, IRFR3504Z Datasheet - Page 5

• Manufacturer Part Number: IRFR3504Z
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3504Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3504Z

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0.001
0.01
0.1
80
60
40
20
10
Fig 9. Maximum Drain Current Vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
Case Temperature
0.10
0.05
0.02
50
0.01
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
2.0
1.5
1.0
0.5
τ
J
τ
1
Ci= τi/Ri
τ
Fig 10. Normalized On-Resistance
1
-60 -40 -20 0
Ci= i/Ri
0.001
I D = 42A
V GS = 10V
R
1
R
1
T J , Junction Temperature (°C)
τ
Vs. Temperature
2
τ
R
2
2
R
2
20 40 60 80 100 120 140 160 180
τ
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
Ri (°C/W)
0.01
1.117
0.5422
0.000536
0.004428
τi (sec)
5
0.1