AQV221N Panasonic Electric Works, AQV221N Datasheet
AQV221N
Specifications of AQV221N
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AQV221N Summary of contents
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... T –40°C to +85°C –40°F to +185°F opr T –40°C to +100°C –40°F to +212°F stg RF PhotoMOS (AQV221N) RF PhotoMOS (AQV221N) TYPICAL APPLICATIONS Measuring and testing equipment 1. Testing equipment for semiconductor performance IC tester, Liquid crystal driver tester, semiconductor performance tester 2 ...
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... RF PhotoMOS (AQV221N) 2. Electrical characteristics (Ambient temperature: 25°C 77°F) Item LED operate current Input LED turn off current LED dropout voltage On resistance # Output Output capacitance # Off state leakage current Turn on time* Switching speed Turn off time* Transfer characteristics I/O capacitance Initial I/O isolation resistance ...
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... Measured portion: between terminals 4 and 6; Ambient temperature: 25°C 77° Frequency PhotoMOS (AQV221N) 6. LED turn off current vs. ambient temperature characteristics Load voltage: Max. (DC); Continuous load current: Max. (DC -40 - 8085 Ambient temperature, °C 9. Off state leakage current vs. load voltage characteristics Measured portion: between terminals 4 and 6 ...
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... RF PhotoMOS (AQV221N) 16. Turn on time distribution Load voltage: 40V(DC) Continuous load current: 150mA(DC) Quantity, n=50; Ambient temperature: 25°C 77° 0.15 0.2 0.25 0.3 0.35 Turn on time 17. Turn off time distribution Load voltage: 40V(DC) Continuous load current: 150mA(DC) Quantity, n=50; Ambient temperature: 25°C 77° ...