EVAL-ADF4113EB2 Analog Devices Inc, EVAL-ADF4113EB2 Datasheet - Page 6
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EVAL-ADF4113EB2
Manufacturer Part Number
EVAL-ADF4113EB2
Description
BOARD EVAL FOR ADF4113 1750MHZ
Manufacturer
Analog Devices Inc
Type
Frequency Synthesizerr
Datasheet
1.ADF4113BRUZ.pdf
(28 pages)
Specifications of EVAL-ADF4113EB2
Contents
Evaluation Board
For Use With/related Products
ADF4113
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
ADF4110/ADF4111/ADF4112/ADF4113
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
RF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
TSSOP θ
LFCSP θ
LFCSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
GND = AGND = DGND = 0 V.
P
P
A
IN
Industrial (B Version)
(Paddle Soldered)
(Paddle Not Soldered)
Vapor Phase (60 sec)
Infrared (15 sec)
to GND
to AV
DD
DD
= 25°C, unless otherwise noted
IN
A to RF
, RF
to GND
to DV
DD
JA
JA
JA
IN
A, RF
Thermal Impedance
Thermal Impedance
Thermal Impedance
DD
IN
B
1
IN
B to GND
Rating
−0.3 V to +7 V
−0.3 V to +0.3 V
−0.3 V to +7 V
−0.3 V to +5.5 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
±320 mV
−40°C to +85°C
−65°C to +150°C
150°C
150.4°C/W
122°C/W
216°C/W
215°C
220°C
DD
P
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. C | Page 6 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).