NBSG11BAEVB ON Semiconductor, NBSG11BAEVB Datasheet - Page 9

• Manufacturer Part Number: NBSG11BAEVB
• Description: BOARD EVALUATION BBG NBSG11BA
• Manufacturer: ON Semiconductor

Specifications of NBSG11BAEVB

• Technology Type: Evaluation Board
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With/related Products: NBSG11
• Other names: NBSG11BAEVB; NBSG11BAEVBOS

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
27. Measured using a 500 mV source, 50% duty cycle clock source. All loading with 50 W to V
28. See Figure 5. t
29. Within−Device skew is defined as identical transitions on similar paths through a device.
30. Device−to−device skew for identical transitions at identical V
31. V
Table 9. AC CHARACTERISTICS for QFN−16
f
t
t
t
t
V
t
t
Symbol
max
PLH
PHL
SKEW
JITTER
r
f
INPP
value of 10.5 GHz, output amplitude is approximately 200 mV (as shown in Figure 4, where output P−P spec is shown as a
minimum/guarantee of around 150 mV). Input edge rates 40 ps (20% − 80%).
INPP
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
(MAX) cannot exceed V
Figure 4. Output Amplitude (V
Maximum Frequency
(See Figure 4. F
Propagation Delay to
Output Differential
Duty Cycle Skew (Note 28)
Within−Device Skew (Note 29)
Device−to−Device Skew (Note 30)
RMS Random Clock Jitter
Peak−to−Peak Data Dependent Jitter
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 31)
Output Rise/Fall Times
(20% − 80%) @ 1 GHz
SKEW
= |t
Characteristic
PLH
600
500
400
300
200
100
max
Ñ Ñ Ñ Ñ
Ñ Ñ Ñ Ñ
Ñ Ñ
Ñ Ñ
Ñ Ñ
Ñ Ñ
0
− t
/JITTER) (Note 27)
CC
PHL
Ó Ó Ó
Ñ Ñ Ñ Ñ Ñ Ñ
Ó Ó Ó
Ñ Ñ Ñ Ñ Ñ Ñ
Ó Ó Ó
Ó Ó Ó
Ó Ó Ó
Ó Ó Ó
Ó Ó Ó
Ó Ó Ó
1
− V
| for a nominal 50% Differential Clock Input Waveform.
OUTPUT P−P SPEC
EE
2
.
f
f
in
Ô Ô Ô Ô
Ô Ô Ô Ô
Ô Ô
Ô Ô
Ô Ô
Ô Ô
in
< 10 Gb/s
< 10 GHz
OUTPP
3
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Ö Ö Ö
Q, Q
4
) vs. Input Frequency (F
V
INPUT FREQUENCY (GHz)
CC
Ñ Ñ Ñ Ñ
Ñ Ñ Ñ Ñ
Ñ Ñ
Ñ Ñ
Ñ Ñ
Ñ Ñ
http://onsemi.com
10.5
= 0 V; V
Min
5
90
75
15
Ó Ó
Ó Ó
Ó Ó
Ó Ó
Ó Ó
Ó Ó
Ó Ó
OUTPUT AMP.
CC
Ô Ô Ô
Ô Ô Ô
Ô Ô Ô
Ô Ô Ô
Ô Ô Ô
Ô Ô Ô
6
−40°C
levels.
EE
10.7
Typ
125
0.2
12
25
30
9
3
6
= −3.465 V to −2.375 V or V
7
Ò Ò Ò Ò
Ò Ò
Ò Ò
Ò Ò
2600
Max
160
15
15
50
55
1
8
Õ Õ
Õ Õ
Õ Õ
Õ Õ
Š Š Š
Š Š Š
Š Š Š
Š Š Š
IN
9
10.5
Min
90
75
20
) at Ambient Temperature (Typical)
10
25°C
Ú Ú
Ú Ú
Ú Ú Ò Ò Ò
CC
10.7
Typ
125
0.2
12
25
30
3
6
11
− 2.0 V for QFN package. For minimum f
Ò Ò Ò
CC
2600
Max
160
15
15
50
55
12
1
= 2.375 V to 3.465 V; V
10.5
Min
90
75
20
85°C
10.7
Typ
125
0.2
12
25
30
3
6
2600
Max
160
EE
15
15
50
55
1
= 0 V
Unit
GHz
mV
ps
ps
ps
ps
max