MPC8378E-MDS-PB Freescale Semiconductor, MPC8378E-MDS-PB Datasheet - Page 17
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MPC8378E-MDS-PB
Manufacturer Part Number
MPC8378E-MDS-PB
Description
BOARD PROCESSOR FOR MDS S
Manufacturer
Freescale Semiconductor
Type
MPUr
Specifications of MPC8378E-MDS-PB
Contents
Board
For Use With/related Products
MPC8378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 14
Table 15
GV
Freescale Semiconductor
Output low current (V
Note:
1
2
3
4
5
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Note:
1
2
3
4
5
GV
MV
noise on MV
V
equal to MV
Output leakage is measured with all outputs disabled, 0 V
See AN3665, “MPC837xE Design Checklist,” for proper DDR termination.
This parameter is sampled. GV
GV
MV
noise on MV
V
equal to MV
Output leakage is measured with all outputs disabled, 0 V
See AN3665, “MPC837xE Design Checklist,” for proper DDR termination.
DD
TT
TT
DD
REF
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM GV
is expected to be within 50 mV of the DRAM GV
is expected to be equal to 0.5 × GV
is expected to be equal to 0.5 × GV
provides the DDR2 capacitance when GV
provides the recommended operating conditions for the DDR SDRAM component(s) when
Table 13. DDR2 SDRAM DC Electrical Characteristics for GV
REF
REF
REF
REF
Parameter
Parameter
. This rail should track variations in the DC level of MV
. This rail should track variations in the DC level of MV
Table 15. DDR SDRAM DC Electrical Characteristics for GV
may not exceed ±2% of the DC value.
may not exceed ±2% of the DC value.
Parameter
OUT
OUT
OUT
.
MPC8378E PowerQUICC II Pro Processor Hardware Specifications, Rev. 4
= 0.3 V)
= 0.38 V)
= 1.9 V)
Table 14. DDR2 SDRAM Capacitance for GV
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
DD
DD
, and to track GV
, and to track GV
Symbol
Symbol
MV
GV
V
I
V
I
V
I
I
OH
OL
OZ
OL
TT
IH
REF
IL
DD
Symbol
DD
DD
C
C
DIO
IO
at all times.
at all times.
≤
≤
DD
V
V
OUT
OUT
(typ) = 1.8 V.
MV
MV
DD
DD
0.49 × GV
A
DC variations as measured at the receiver. Peak-to-peak
REF
REF
DC variations as measured at the receiver. Peak-to-peak
13.4
Min
≤
≤
2.375
–15.2
= 25°C, V
–0.3
15.2
Min
–40
GV
GV
REF
REF
+ 0.18
– 0.04
DD
DD
Min
.
.
—
DD
6
.
.
OUT
DD
DD
(typ) = 1.8 V
= GV
(typ) = 1.8 V (continued)
MV
MV
0.51 × GV
GV
DD
DD
REF
REF
Max
2.625
DD
—
Max
Max
/2, V
0.5
40
—
—
(typ) = 2.5 V
8
+ 0.04
+ 0.3
– 0.18
OUT
DD
(peak-to-peak) = 0.2 V.
DDR1 and DDR2 SDRAM
Unit
pF
pF
Unit
Unit
mA
mA
mA
μA
V
V
V
V
V
Notes
Notes
Notes
2, 5
—
1
1
—
—
—
—
1
3
4
17
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