DEMO9S08LG32 Freescale Semiconductor, DEMO9S08LG32 Datasheet - Page 35

• Manufacturer Part Number: DEMO9S08LG32
• Description: DEMO BOARD FOR LG32 FAMILY MCU
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of DEMO9S08LG32

• Contents: Board, CD
• Processor To Be Evaluated: MC9S08LG32x
• Data Bus Width: 8 bit
• Interface Type: USB
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Silicon Manufacturer: Freescale
• Core Architecture: HCS08
• Core Sub-architecture: HCS08
• Silicon Core Number: MC9S08
• Silicon Family Name: S08LG
• Rohs Compliant: Yes
• For Use With/related Products: MC9S08LG32
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1
2.14
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
2.14.2
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested configuration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below
Freescale Semiconductor
Radiated emissions,
electric field
1
2
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
Data based on qualification test results.
Data based on qualification test results. Not tested in production.
Exceptions as covered in footnotes 3 and 4.
Parameter
EMC Performance
Parameter
Radiated Emissions
Conducted Transient Susceptibility
V
Symbol
RE_TEM
Table 19. Radiated Emissions, Electric Field
V
Table 20. Conducted Susceptibility, EFT/B
Symbol
CS_EFT
MC9S08LG32 Series Data Sheet, Rev. 7
Package type =
Conditions
T
V
A
Package type = 80-pin LQFP
80 LQFP
DD
= +25
= 5.5
o
Conditions
T
C
V
A
DD
= +25
= 5.5
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
o
C
Frequency
SAE Level
IEC Level
4 kHz crystal
4 MHz bus
f
OSC
4 MHz crystal
/f
16 MHz bus
BUS
f
OSC
Table
/f
BUS
Result
20.
A
B
C
D
Electrical Characteristics
Amplitude
Level
(Max)
(Min)
>4.0
>4.0
>4.0
10
14
>4.0
8
5
L
2
1
2
3
4
1
dBμV
Unit
Unit
kV
—
—
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