AG003-01E NVE, AG003-01E Datasheet - Page 82
![ASSEMBLY CURRENT SENSOR EVAL](/photos/9/20/92012/ag003-01e_sml.jpg)
AG003-01E
Manufacturer Part Number
AG003-01E
Description
ASSEMBLY CURRENT SENSOR EVAL
Manufacturer
NVE
Specifications of AG003-01E
Sensor Type
Magnetic. GMR (Giant Magnetoresistive)
Interface
Analog
Embedded
No
Utilized Ic / Part
AA Series Current Sensors
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Sensitivity
-
Sensing Range
-
Other names
391-1060
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The end result in this case is that the mean free path length of the conduction electrons is fairly short,
resulting in a relatively high electrical resistance.
If an external magnetic field of sufficient magnitude is applied to this GMR material, it will overcome
the antiferromagnet coupling of the magnetizations between the two magnetic layers. At this point all
the electrons in both films will have the same spin. It will then become easier for the electrons two
move between the layers:
Note that the mean free path length of the electrons has now increased. This results in an overall lower
electrical resistance for the GMR material. The change in resistivity of the material is shown on the
path length diagram below:
Resistivity
Applying the External Field Results in Lower Device Resistance
Resistivity Plot Showing Operate Points of GMR Material
the Magnetization Directions of
External Magnetic Field Aligns
With and Without an External Magnetic Field Applied;
Top and Bottom Films
Electrons Travel More Readily Through Entire Stack of GMR Material.
Mean Free Path Length of an Electron (Angstroms)
50
www.nve.com
Spin States of the Magnetic Layers are the same;
Average Mean Free Path of the Electrons is Long
No External Field Applied
100
Operate Point of Film,
Magnetization Direction of Top Film
Magnetization Direction of Bottom Film
phone: 952-829-9217 fax: 952-829-9189
with External Field Applied
Operate Point of Film
- 82 -
150
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Conductive Interlayer
Application Notes
Bottom Film
Top Film
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