MCP6V01RD-TCPL Microchip Technology, MCP6V01RD-TCPL Datasheet - Page 5
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MCP6V01RD-TCPL
Manufacturer Part Number
MCP6V01RD-TCPL
Description
REF DESIGN THERMCPL FOR MCP6V01
Manufacturer
Microchip Technology
Datasheets
1.MCP6V01RD-TCPL.pdf
(44 pages)
2.MCP6V01RD-TCPL.pdf
(30 pages)
3.MCP6V03-ESN.pdf
(40 pages)
Specifications of MCP6V01RD-TCPL
Channels Per Ic
1 - Single
Amplifier Type
Chopper (Zero-Drift)
Output Type
Rail-to-Rail
Slew Rate
0.5 V/µs
Current - Output / Channel
22mA
Operating Temperature
-40°C ~ 125°C
Voltage - Supply, Single/dual (±)
1.8 V ~ 5.5 V
Board Type
Fully Populated
Utilized Ic / Part
MCP6V01
Silicon Manufacturer
Microchip
Silicon Core Number
MCP6V01
Kit Application Type
Sensing - Temperature
Application Sub Type
Temperature Sensor
Processor To Be Evaluated
MCP6V01
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Current - Supply (main Ic)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
TABLE 1-3:
TABLE 1-4:
© 2008 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
CS Pull-Down Resistor (MCP6V03)
CS Pull-Down Resistor
CS Low Specifications (MCP6V03)
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications (MCP6V03)
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current per
amplifier
Amplifier Output Leakage, CS High I
CS Dynamic Specifications (MCP6V03)
CS Low to Amplifier Output On
Turn-on Time
CS High to Amplifier Output High-Z
Internal Hysteresis
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-4x4 DFN
Thermal Resistance, 8L-SOIC
Note 1:
OUT
= V
2:
DD
Parameters
/2, V
Operation must not cause T
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
Parameters
L
= V
DIGITAL ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
DD
/2, R
L
= 20 kΩ to V
O_LEAK
V
Sym
I
t
R
I
V
t
HYST
V
CSL
CSH
I
I
OFF
ON
SS
SS
J
PD
IH
IL
to exceed Maximum Junction Temperature specification (150°C).
L
, C
0.7V
Sym
L
θ
θ
θ
T
T
T
Min
V
JA
JA
JA
= 60 pF, and CS = GND (refer to
—
—
—
—
—
—
—
—
A
A
A
3
SS
DD
Min
V
-40
-40
-65
—
—
—
A
DD
0.25
Typ
-0.7
-2.3
= +25°C, V
—
—
20
11
10
5
5
/R
PD
Typ
150
41
44
—
—
—
0.3V
Max Units
V
100
DD
—
—
—
—
—
—
—
—
DD
DD
= +1.8V to +5.5V, V
Max
+125
+125
+150
—
—
—
MΩ
pA
pA
µA
µA
pA
µs
µs
V
V
V
Figure 1-5
DD
Units
°C/W
°C/W
°C/W
CS = V
CS = V
CS = V
CS = V
CS = V
CS Low = V
V
CS High = V
V
°C
°C
°C
OUT
OUT
= +1.8V to +5.5V, V
= 0.9 V
= 0.1 V
MCP6V01/2/3
and
SS
DD
DD
DD
DD
(Note 1)
(Note 2)
SS
, V
, V
= GND, V
Figure
SS
DD
DD
DD
DD
DD
+0.3 V, G = +1 V/V,
Conditions
= 1.8V
= 5.5V
/2
– 0.3 V, G = +1 V/V,
/2
1-6).
Conditions
CM
SS
= V
= GND.
DS22058C-page 5
DD
/3,