STEVAL-ISA055V1 STMicroelectronics, STEVAL-ISA055V1 Datasheet - Page 6
![BOARD EVAL BASED ON ST1S12](/photos/9/14/91470/steval-isa055v1_sml.jpg)
STEVAL-ISA055V1
Manufacturer Part Number
STEVAL-ISA055V1
Description
BOARD EVAL BASED ON ST1S12
Manufacturer
STMicroelectronics
Type
DC/DC Switching Converters, Regulators & Controllersr
Specifications of STEVAL-ISA055V1
Mfg Application Notes
ST1S12 AppNote
Main Purpose
DC/DC, Step Down
Outputs And Type
1, Non-Isolated
Voltage - Output
1.2V
Current - Output
700mA
Voltage - Input
2.5 ~ 5.5V
Regulator Topology
Buck
Frequency - Switching
1.7MHz
Board Type
Fully Populated
Utilized Ic / Part
ST1S12
Input Voltage
2.5 V to 5.5 V
Output Voltage
1.2 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
ST1S12XX
Kit Application Type
Power Management - Voltage Regulator
Application Sub Type
Synchronous Buck Converter
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
ST1S12x
Other names
497-8219
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STEVAL-ISA055V1
Manufacturer:
STMicroelectronics
Quantity:
1
Electrical characteristics
4
Table 6.
1. Guaranteed by design, but not tested in production.
6/20
%V
R
%V
R
%V
%V
Symbol
PWMf
T
DSON
DSON
D
T
I
V
SHDN
V
I
O
SWL
FB
I
MAX
HYS
I
I
O
O
O
EN
FB
EN
ν
Q
O
IN
/ΔV
/ΔI
/ΔI
/ΔI
-N NMOS switch on resistance
-P PMOS switch on resistance
S
O
O
O
IN
Feedback voltage
V
Minimum input voltage
Quiescent current
Output current
Enable threshold
Enable pin current
Reference line regulation
Reference load regulation
PWM switching frequency
Maximum duty cycle
Switching current limitation
Efficiency
Thermal shutdown
Thermal shutdown hysteresis
Load transient response
Short circuit removal
response
Electrical characteristics
V
otherwise specified. Typical values are referred to 25 °C).
Electrical characteristics for ST1S12G
FB
IN
pin bias current
= V
EN
Parameter
(1)
= 3.6 V, C
IN
= 4.7 µF, C
T
I
V
V
V
Device ON, V
Device OFF
V
I
I
I
(1)
I
I
I
t
I
T
O
O
SW
SW
O
O
O
R
O
A
J
IN
EN
IN
IN
= 100mA to 700mA, T
= t
= 10mA to 0.7A
= 10 mA to 700mA
= 10mA to 100 mA, V
= 100mA to 0.7A, V
= 10mA to I
= -40 to 125°C
= 25°C
Doc ID 14314 Rev 3
= 2.5V to 5.5 V
= 2.5V to 5.5V
= V
= 100mA
= 100mA
= 0, T
F
≥ 200ns, C
O
EN,
Test conditions
= 10 µF, L = 2.2 µH, T
J
(1)
V
= -40°C to 85°C
FB
IN
O
= 0.65V
= short,
= 2.5V to 5.5V
O
(1)
=22µF
(1)
(1)
O
O
A
= 1.8V
ST1S12XX, ST1S12XX12, ST1S12XX18
= 25°C
(1)
= 1.8V
J
= - 40 to 125 °C (unless
Min.
1.16
582
130
-50
2.5
0.7
1.5
-10
-5
0.0025 0.005 %V
Typ.
0.05
0.25
0.25
600
500
150
1.7
1.6
80
90
15
Max.
2.08
0.45
618
600
100
+10
0.5
0.1
0.4
50
+5
1
1
%V
%V
%V
MHz
Unit
O
nA
µA
µA
µA
°C
°C
O
%
%
Ω
Ω
V
V
A
V
A
/ΔV
/mA
O
O
IN