MCP1650DM-DDSC1 Microchip Technology, MCP1650DM-DDSC1 Datasheet - Page 5

• Manufacturer Part Number: MCP1650DM-DDSC1
• Description: BOARD DEMO FOR MCP1650 SEPIC
• Manufacturer: Microchip Technology
• Type: DC/DC Switching Converters, Regulators & Controllersr

Specifications of MCP1650DM-DDSC1

• Main Purpose: DC/DC, Step Up or Down
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 5V
• Current - Output: 160mA
• Voltage - Input: 3 ~ 7V
• Regulator Topology: Boost
• Frequency - Switching: 750kHz
• Board Type: Fully Populated
• Utilized Ic / Part: MCP1650
• Input Voltage: 3 V to 7 V
• Output Voltage: 5 V
• Product: Power Management Modules
• For Use With/related Products: MCP1650R-E/MS
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
V
CS,FB,LBI,LBO,SHDN,PG,EXT............ GND – 0.3V to
Current at EXT pin ................................................ ±1A
Storage temperature .......................... -65°C to +150°C
Operating Junction Temperature........ -40°C to +125°C
ESD protection on all pins
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at V
T
Input Characteristics
Supply Voltage
Undervoltage Lockout
(S Option)
Under Voltage Lockout
(R Option)
Undervoltage Hysteresis
Shutdown Supply Current
Quiescent Supply Current
Soft Start Time
Feedback Characteristics
Feedback Voltage
Feedback Comparator
Hysteresis
Feedback Input Bias Current
Current Sense Input
Current Sense Threshold
Delay from Current Sense to
Output
Ext Drive
EXT Driver ON Resistance
(High Side)
EXT Driver ON Resistance
(Low Side)
Oscillator Characteristics
Switching Frequency
Low Duty Cycle Switch-Over
Voltage
Duty Cycle Switch Voltage
Hysteresis
Low Duty Cycle
High Duty Cycle
IN TO
J
2004 Microchip Technology Inc.
= -40°C to +125°C. Typical values apply for V
GND........................................................... 6.0V
ELECTRICAL
CHARACTERISTICS
Parameters
UVLO
T
V
DC
I
DC
DC
UVLO
UVLO
SNS-TH
dly_ISNS
R
R
LowDuty
V
F
Sym
I
I
T
V
V
SHD
FBlk
HIGH
LOW
OSC
HYS
I
HIGH
SS
Q
FB
LOW
IN
Hyst
HYST
V
IN
4 kV HBM
+ 0.3V
1.85
1.18
Min
650
IN
2.7
2.4
-50
75
50
72
—
—
—
—
—
—
—
—
—
—
= 3.3V, T
0.001
2.55
1.22
Typ
117
120
500
114
750
2.0
3.8
—
12
—
80
92
56
80
8
4
A
+25°C.
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
Max
2.15
1.26
220
155
850
5.5
2.7
23
50
18
12
62
88
—
—
—
—
—
1
MCP1650/51/52/53
Units
kHz
mV
mV
mV
mV
µA
µA
nA
µs
ns
%
%
V
V
V
V
V
IN
= +2.7V to +5.5V, SHDN = High,
V
V
SHDN = GND
EXT = Open
All conditions
V
V
IN
IN
FB
IN
rising edge
rising edge
rising edge
< 1.3V
Conditions
DS21876A-page 5