NCP370GEVB ON Semiconductor, NCP370GEVB Datasheet - Page 10

• Manufacturer Part Number: NCP370GEVB
• Description: EVAL BOARD FOR NCP370G
• Manufacturer: ON Semiconductor

Specifications of NCP370GEVB

• Design Resources: NCP370GEVB BOM NCP370GEVB Gerber Files NCP370GEVB Schematic
• Main Purpose: Overvoltage Protection
• Embedded: No
• Utilized Ic / Part: NCP370
• Primary Attributes: Overvoltage Protected up to 28V and down to -28V
• Secondary Attributes: Reverse Mode
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP370G
• Other names: NCP370GEVBOS

ESD Tests
the Input pin. A 1 mF (I.E Murata GRM188R61E105KA12D)
must be placed close to the IN pins. If the IEC61000−4−2 is
not a requirement, a 100 nF/25 V must be placed between IN
and GND.
(Contact) at the input per IEC61000−4−2 (level 4).
electrostatic discharge waveform.
The NCP370 conforms to the IEC61000−4−2, level 4 on
The above configuration supports 15 kV (Air) and 8 kV
Please refer to Figure 8 for the IEC61000−4−2
Figure 8. I
peak
= f(t)/IEC61000−4−2
250
200
150
100
50
0
0
100
Figure 7. Copper heat Spread Area
COPPER HEAT SPREAD AREA (mm
PCB cu thk 2 oz
qJA Curve with
Power Curve with
PCB cu thk 2 oz
200
http://onsemi.com
300
10
PCB cu thk 1 oz
400
qJA Curve with
R
N−MOSFETs to protect the system, connected on OUT pin,
from overvoltage, negative voltage and reverse current
protection. During normal operation, the R
characteristics of the N−MOSFETs give rise to low losses on
V
As example: R
= 800 mA.
V
NMOS Losses = R
Power Curve with
out
out
DS(on)
PCB cu thk 1 oz
The NCP370 includes two internal low R
pin.
= 4.905 V
500
and Dropout
2
)
600
load
= 8 W, Vin= 5 V. R
DS(on)
700
2.5
2
1.5
1
0.5
0
x I
out
2
= 0.155 x 0.8
DS(on)
= 155 mW. I
2
= 0.0992 W
DS(on)
DS(on)
out