EVAL6206N STMicroelectronics, EVAL6206N Datasheet - Page 19

• Manufacturer Part Number: EVAL6206N
• Description: EVAL BOARD FOR L6206N DIP
• Manufacturer: STMicroelectronics

Specifications of EVAL6206N

• Mfg Application Notes: PractiSPIN AppNote
• Design Resources: EVAL6206N/6206N Gerber Files EVAL6206N Schematic/Bill of Materials
• Main Purpose: Power Management, H Bridge Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: L6205N DIP
• Primary Attributes: Dual Full-Bridge (H-Bridge), 2.8A (5.6A Peak). 8 ~ 52 V, 0.3 Ohm
• Secondary Attributes: Non-Inverting, Can be Paralleled
• Architecture: Analog
• Applications: Motor Control
• Processor To Be Evaluated: L6206
• For Use With: 497-4138 - EVALUATION BOARD PRACTISPIN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5487

Figure 22. Typical Quiescent Current vs.
Figure 23. Normalized Typical Quiescent
Figure 24. Typical Low-Side R
Iq [m A]
Iq / (Iq @ 1 kHz)
R
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.300
0.296
0.292
0.288
0.284
0.280
0.276
5.6
5.4
5.2
5.0
4.8
4.6
DS(ON)
0
0
0
[ ]
Supply Voltage
Current vs. Switching Frequency
Supply Voltage
10
20
f
sw
5
= 1kHz
20
10
40
f
SW
T
j
V
= 25°C
V
[kHz]
30
S
S
15
[V]
[V]
60
T
j
DS(ON)
= 25°C
40
20
80
T
vs.
T
j
50
= 85°C
j
25
= 125°C
100
30
60
Figure 25. Typical High-Side RDS(ON) vs.
Figure 26. Normalized R
Figure 27. Typical Drain-Source Diode
R
I
0.380
0.376
0.372
0.368
0.364
0.360
0.356
0.352
0.348
0.344
0.340
0.336
SD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.8
1.6
1.4
1.2
1.0
0.8
R
DS(ON)
DS(ON)
[A]
700
0
[ ]
0
/ (R
DS(ON)
Supply Voltage
Temperature (typical value)
Forward ON Characteristic
20
800
5
@ 25 °C )
T
j
40
= 25°C
900
10
60
V
SD
Tj [°C]
T
1000
j
V
DS(ON)
[mV]
= 25°C
15
S
[V]
80
1100
vs.Junction
20
100
1200
120
25
L6206
19/23
1300
140
30