MCP3421DM-BFG Microchip Technology, MCP3421DM-BFG Datasheet - Page 2

BOARD DEMO FOR MCP3421

MCP3421DM-BFG

Manufacturer Part Number
MCP3421DM-BFG
Description
BOARD DEMO FOR MCP3421
Manufacturer
Microchip Technology

Specifications of MCP3421DM-BFG

Main Purpose
Power Management, Battery Gauge
Utilized Ic / Part
MCP3421
Processor To Be Evaluated
MCP3421
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Secondary Attributes
-
Embedded
-
Primary Attributes
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
MCP3421
1.0
1.1
V
All inputs and outputs w.r.t V
Differential Input Voltage ...................................... |V
Output Short Circuit Current .................................Continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±10 mA
Storage Temperature.....................................-65°C to +150°C
Ambient Temp. with power applied ...............-55°C to +125°C
ESD protection on all pins ................ ≥ 6 kV HBM, ≥ 400V MM
Maximum Junction Temperature (T
1.2
TABLE 1-1:
DS22003D-page 2
Electrical Specifications: Unless otherwise specified, all parameters apply for T
V
Analog Inputs
Differential Input Range
Common-Mode Voltage Range
(absolute)
Differential Input Impedance
(Note 2)
Common Mode input
Impedance
System Performance
Resolution and No Missing
Codes
Data Rate
Output Noise
Integral Nonlinearity
Internal Reference Voltage
Gain Error
Note 1:
DD
IN
...................................................................................7.0V
+ = V
(Note 8)
2:
3:
4:
5:
6:
7:
8:
IN
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Electrical Specifications
Parameters
- = V
(Note 1)
(Note 3)
(Note 5)
Any input voltage below or greater than this voltage causes leakage current through the ESD diodes at the input pins.
This parameter is ensured by characterization and not 100% tested.
This input impedance is due to 3.2 pF internal input sampling capacitor.
The total conversion speed includes auto-calibration of offset and gain.
INL is the difference between the endpoints line and the measured code at the center of the quantization band.
Includes all errors from on-board PGA and V
Full Scale Range (FSR) = 2 x 2.048/PGA = 4.096/PGA.
This parameter is ensured by characterization and not 100% tested.
This parameter is ensured by design and not 100% tested.
REF
/2. All ppm units use 2*V
ELECTRICAL CHARACTERISTICS
(Note 4)
SS
............... –0.3V to V
J
) . .........................+150°C
Z
Z
V
Sym
IND
INC
DR
INL
REF
(f)
(f)
REF
V
as full-scale range.
SS
2.75
176
Min
12
14
16
18
44
11
-0.3
DD
DD
+0.3V
- V
REF
±2.048/PGA
SS
2.25/PGA
|
.
2.048
3.75
0.05
240
Typ
1.5
25
60
15
10
†Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability
V
DD
20.5
0.35
Max
328
5.1
82
35
+0.3
A
= -40°C to +85°C, V
ppm of
µV
Units
FSR
SPS
SPS
SPS
SPS
Bits
Bits
Bits
Bits
%
V
V
V
RMS
.
© 2007 Microchip Technology Inc.
V
During normal mode operation
PGA = 1, 2, 4, 8
DR = 240 SPS
DR = 60 SPS
DR = 15 SPS
DR = 3.75 SPS
S1,S0 = ‘00’, (12 bits mode)
S1,S0 = ‘01’, (14 bits mode)
S1,S0 = ‘10’, (16 bits mode)
S1,S0 = ‘11’, (18 bits mode)
T
PGA = 1, V
DR = 3.75 SPS
(Note 6)
PGA = 1, DR = 3.75 SPS
A
IN
= 25°C, DR = 3.75 SPS,
= V
DD
IN
= +5.0V, V
+ - V
IN
= 0
IN
Conditions
-
SS
= 0V,

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